Title :

327 Gbps THz silicon photonic interconnect with sub-λ bends

Author(s) :

Gupta, Manoj [Auteur]
Nanyang Technological University [Singapour] [NTU]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Navaratna, Nikhil [Auteur]
Szriftgiser, Pascal [Auteur]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Ducournau, Guillaume [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Singh, Ranjan [Auteur correspondant]

Journal title :

Applied Physics Letters

Publisher :

American Institute of Physics

Publication date :

2023-10-23

ISSN :

0003-6951

English keyword(s) :

Electronic band structure
Topological insulator
Interconnects
Wireless communications
Telecommunications engineering
Optical waveguides
Wavelength division multiplexing
Photonic crystal waveguides
Photonic integrated circuits
Terahertz spectroscopy

HAL domain(s) :

Physique [physics]
Sciences de l'ingénieur [physics]

English abstract : [en]

Miniaturized photonic devices at the terahertz (THz) band are envisioned to bring significant enhancement to data transfer capacity and integration density for computing and future wireless communications. Broadband silicon ...
Show more >Miniaturized photonic devices at the terahertz (THz) band are envisioned to bring significant enhancement to data transfer capacity and integration density for computing and future wireless communications. Broadband silicon waveguiding technology has continuously matured to advance low-loss platforms for integrated solutions. However, challenges are faced in realizing compact waveguiding platforms with different degrees of bends due to bend induced losses and mode distortion. Here, we demonstrate multiple bend incorporated photonic crystal waveguide platforms for multicarrier on-chip transmission. Our silicon interconnect device exhibits optimized bending radius to the free space wavelength ratio of 0.74, without signal distortion and transmission bandwidth of 90 GHz, representing 25.4% fractional bandwidth at 355 GHz. The broadband waveguide interconnect enables an aggregate data transfer rate of 327 Gbps by sending the complex modulated data over multiple carriers. This work augments the development of THz photonic integrated circuit for the future generations of on-chip high data rate interconnect and wireless communication, ranging from the sixth to X generation (6G to XG).Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Convertisseurs THz agiles & fonctionnalisés - FUNctionalized & agile TERAhertz converters
Devices and SYStems enabling Ultra High Data-rates links in sub-TERAhertz

Collections :

• Laboratoire de Physique des Lasers, Atomes et Molécules (PhLAM) - UMR 8523

Source :

Harvested from HAL