Ultrahigh vacuum Raman spectroscopy for the preparation of III–V semiconductor surfaces
Ultrahigh vacuum Raman spectroscopy for the preparation of III-V semiconductor surfaces.
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
PMID :
Title :
Ultrahigh vacuum Raman spectroscopy for the preparation of III–V semiconductor surfaces
Ultrahigh vacuum Raman spectroscopy for the preparation of III-V semiconductor surfaces.
Ultrahigh vacuum Raman spectroscopy for the preparation of III-V semiconductor surfaces.
Author(s) :
Khelifi, Wijden [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Canneson, Damien [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Berthe, Maxime [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Legendre, Sébastien [Auteur]
HORIBA France SAS [Villeneuve d'Ascq]
Coinon, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Desplanque, Ludovic [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Wallart, Xavier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Biadala, Louis [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Grandidier, Bruno [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Physique - IEMN [PHYSIQUE - IEMN]
Capiod, Pierre [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
JUNIA [JUNIA]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Canneson, Damien [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Berthe, Maxime [Auteur]

Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Legendre, Sébastien [Auteur]
HORIBA France SAS [Villeneuve d'Ascq]
Coinon, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Desplanque, Ludovic [Auteur]

EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Wallart, Xavier [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Biadala, Louis [Auteur]

Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Grandidier, Bruno [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Physique - IEMN [PHYSIQUE - IEMN]
Capiod, Pierre [Auteur]

Physique - IEMN [PHYSIQUE - IEMN]
JUNIA [JUNIA]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Review of Scientific Instruments
Publisher :
American Institute of Physics
Publication date :
2023-12-01
ISSN :
0034-6748
HAL domain(s) :
Physique [physics]
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]
English abstract : [en]
Raman spectroscopy is well-suited for the characterization of semiconductor materials. However, due the weakness of the Raman signal, the studies of thin semiconductor layers in complex environments, such as ultrahigh ...
Show more >Raman spectroscopy is well-suited for the characterization of semiconductor materials. However, due the weakness of the Raman signal, the studies of thin semiconductor layers in complex environments, such as ultrahigh vacuum, are rather scarce. Here, we have designed a Raman apparatus based on the use of a fiber optic probe, with a lens collecting the backscattered light directly inserted in ultrahigh vacuum. The solution has been tested for the preparation of III–V semiconductor surfaces, which requires the recovery of their atomic reconstruction. The surfaces were either protected with a thin As amorphous layer or covered with a native oxide prior to their treatment. The analysis of the Raman spectra, which was correlated with the study of the surfaces with low temperature scanning tunneling microscopy at the end of the cleaning process, shows the high potential of Raman spectroscopy for monitoring the cleanliness of III–V semiconductor heterostructures in situ.Show less >
Show more >Raman spectroscopy is well-suited for the characterization of semiconductor materials. However, due the weakness of the Raman signal, the studies of thin semiconductor layers in complex environments, such as ultrahigh vacuum, are rather scarce. Here, we have designed a Raman apparatus based on the use of a fiber optic probe, with a lens collecting the backscattered light directly inserted in ultrahigh vacuum. The solution has been tested for the preparation of III–V semiconductor surfaces, which requires the recovery of their atomic reconstruction. The surfaces were either protected with a thin As amorphous layer or covered with a native oxide prior to their treatment. The analysis of the Raman spectra, which was correlated with the study of the surfaces with low temperature scanning tunneling microscopy at the end of the cleaning process, shows the high potential of Raman spectroscopy for monitoring the cleanliness of III–V semiconductor heterostructures in situ.Show less >
Language :
Anglais
Popular science :
Non
ANR Project :
Source :
Files
- 123702_1_5.0152031.pdf
- Open access
- Access the document