Comparison of Sub-Micron thick AlGaN/GaN ...
Document type :
Communication dans un congrès avec actes
Title :
Comparison of Sub-Micron thick AlGaN/GaN and AlN/GaN HEMTs on Silicon for RF applications
Author(s) :
Carneiro, Elodie [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Rennesson, Stéphanie [Auteur]
Semond, Fabrice [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Rennesson, Stéphanie [Auteur]
Semond, Fabrice [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Conference title :
46th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2023)
City :
Palerme (Italie)
Country :
Italie
Start date of the conference :
2023-05-21
Book title :
Proceeding of WOCSDICE 2023
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
In this paper, a performance comparison between sub-micron thick AlGaN/GaN and AlN/GaN HEMT devices are reported. Various gate lengths have been employed in order to analyze the impact on DC and RF performances. Electrical ...
Show more >In this paper, a performance comparison between sub-micron thick AlGaN/GaN and AlN/GaN HEMT devices are reported. Various gate lengths have been employed in order to analyze the impact on DC and RF performances. Electrical characteristics of these structures for 100 nm gate length show a higher maximum drain current, extrinsic transconductance Gm and RF performance with the AlN barrier as expected. An excellent electron confinement with a low leakage current below 10 µA/mm is achieved up to VDS = 30 V on both structures and can be combined with low trapping effects despite the thin total growth thickness of less than 1 µm on silicon. These results demonstrate the interest of sub-micron thick AlN/GaN-on-Si heterostructures for high frequency applications.Show less >
Show more >In this paper, a performance comparison between sub-micron thick AlGaN/GaN and AlN/GaN HEMT devices are reported. Various gate lengths have been employed in order to analyze the impact on DC and RF performances. Electrical characteristics of these structures for 100 nm gate length show a higher maximum drain current, extrinsic transconductance Gm and RF performance with the AlN barrier as expected. An excellent electron confinement with a low leakage current below 10 µA/mm is achieved up to VDS = 30 V on both structures and can be combined with low trapping effects despite the thin total growth thickness of less than 1 µm on silicon. These results demonstrate the interest of sub-micron thick AlN/GaN-on-Si heterostructures for high frequency applications.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
ANR Project :
Source :
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