[Invited] High efficiency high robustness ...
Type de document :
Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes: Conférence invitée
Titre :
[Invited] High efficiency high robustness mmW AlN/GaN transistors
Auteur(s) :
Titre de la manifestation scientifique :
International Microwave Symposium (IMS 2023)
Ville :
San Diego (CA)
Pays :
Etats-Unis d'Amérique
Date de début de la manifestation scientifique :
2023-06-11
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
Power-added-efficiency (PAE) becomes a key parameter in order to support complex waveforms with high peak-to-average ratio and large instantaneous bandwidth required for 5G applications for instance. Overall, a high PAE ...
Lire la suite >Power-added-efficiency (PAE) becomes a key parameter in order to support complex waveforms with high peak-to-average ratio and large instantaneous bandwidth required for 5G applications for instance. Overall, a high PAE is mandatory in order to reduce the power dissipation, which is a major issue for future compact solid-state power amplifiers. GaN-based High electron mobility transistors (HEMTs) on SiC substrate have already demonstrated attractive efficiencies in the mm-wave range. However, state-of-the-art GaN HEMT PAE performances are typically limited to 50% or below in the Ka-band and above, especially for high power densities > 2 W/mm. This is mainly due to the lack of power gain, the enhanced trapping effects and reduced electron confinement when downscaling the device size. In this talk, promising solutions based on highly scaled epitaxial heterostructures will be addressed, enabling mm-wave high performances and robustness.Lire moins >
Lire la suite >Power-added-efficiency (PAE) becomes a key parameter in order to support complex waveforms with high peak-to-average ratio and large instantaneous bandwidth required for 5G applications for instance. Overall, a high PAE is mandatory in order to reduce the power dissipation, which is a major issue for future compact solid-state power amplifiers. GaN-based High electron mobility transistors (HEMTs) on SiC substrate have already demonstrated attractive efficiencies in the mm-wave range. However, state-of-the-art GaN HEMT PAE performances are typically limited to 50% or below in the Ka-band and above, especially for high power densities > 2 W/mm. This is mainly due to the lack of power gain, the enhanced trapping effects and reduced electron confinement when downscaling the device size. In this talk, promising solutions based on highly scaled epitaxial heterostructures will be addressed, enabling mm-wave high performances and robustness.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Projet ANR :
Source :