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Résultats 1-7 de 7
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Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET
22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, Takamatsu, 31-05-2010, Proceedings of the 22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, _, 2010Communication dans un congrès avec actes -
Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation
5th European Microwave Integrated Circuits Conference, EuMIC 2010, Paris, 27-09-2010, Proceedings of the 5th European Microwave Integrated Circuits Conference, EuMIC 2010, _, 2010Communication dans un congrès avec actes -
100mV noise performances of Te-doped Sb-HEMT
8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Proceedings of the 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, _, 2010Communication dans un congrès avec actes -
Anisotropic transport properties in InAs/AlSb heterostructures
Applied Physics Letters, American Institute of Physics, 2010, 97, 243510-1-3Compte-rendu et recension critique d'ouvragetexte intégral -
Tellurium delta-doped 120nm AlSb/InAs HEMTs : towards sub-100mV electronics
68th Device Research Conference, DRC 2010, 2010, Proceedings of the 68th Device Research Conference, DRC 2010, _, 2010Communication dans un congrès avec actes -
High frequency performance of tellurium δ-doped AlSb/InAs HEMTs at low power supply
5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, Proceedings of the 5th European Microwave Integrated Circuits Conference, EuMIC 2010, _, 2010Communication dans un congrès avec actes -
Sb-HEMT : toward 100-mV cryogenics electronics
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2010, 57, 1903-1909Compte-rendu et recension critique d'ouvrage