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Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides
Microelectronics Reliability, Elsevier, 02-1999, 39; 2, 165-169Compte-rendu et recension critique d'ouvragefulltext -
HOT-CARRIER RELIABILITY IN n-MOSFETs USED AS PASS-TRANSISTORS
Microelectronics Reliability, Elsevier, 04-1998, 38; 4, 539-544Compte-rendu et recension critique d'ouvragefulltext -
Hot-carrier injections in SiO2
Microelectronics Reliability, Elsevier, 02-1998, 38; 1, 7-22Compte-rendu et recension critique d'ouvragefulltext