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Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides
Microelectronics Reliability, Elsevier, 02-1999, 39; 2, 165-169Compte-rendu et recension critique d'ouvragefulltext -
Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides
Microelectronics Reliability, Elsevier, 02-1999, 39; 2, 165-169Compte-rendu et recension critique d'ouvragefulltext