Recent improvements of flexible GaN-based ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Recent improvements of flexible GaN-based HEMT technology
Author(s) :
Mhedhbi, Sarra [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lesecq, Marie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Altuntas, Philippe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Defrance, Nicolas [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Cordier, Yvon [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Damilano, Benjamin [Auteur]
Jimenez, Gema Tabares [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Ebongue, Abel [Auteur]
Hoel, Virginie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Circuits Systèmes Applications des Micro-ondes - IEMN [CSAM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lesecq, Marie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Altuntas, Philippe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Defrance, Nicolas [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Cordier, Yvon [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Damilano, Benjamin [Auteur]
Jimenez, Gema Tabares [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Ebongue, Abel [Auteur]
Hoel, Virginie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Circuits Systèmes Applications des Micro-ondes - IEMN [CSAM - IEMN]
Journal title :
physica status solidi (a)
Pages :
1600484, 5 pages
Publisher :
Wiley
Publication date :
2017-04
ISSN :
0031-8965
English keyword(s) :
AlGaN
flexible electronics
GaN
high electron mobility transistors
molecular beam epitaxy
flexible electronics
GaN
high electron mobility transistors
molecular beam epitaxy
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
This paper reports on the fabrication and characterization of AlGaN/GaN HEMTs transfered onto two different adhesive flexible tapes. Technological improvements were made during the study concerning thermal conductivity of ...
Show more >This paper reports on the fabrication and characterization of AlGaN/GaN HEMTs transfered onto two different adhesive flexible tapes. Technological improvements were made during the study concerning thermal conductivity of the tapes as well as the transfer process. In this paper, it is shown that the device transferred onto the tape with higher thermal conductivity exhibits, at VDS = 5V, a better linear power gain G(p) by 31.6% (15.8 dB instead of 12 dB), and a power added efficiency PAE rise by 111% (29.6 instead of 14%) associated with an enhancement of saturated power P-sat by 281% (420 instead of 110mWmm(-1)). Optimizing the flexible tape thermal properties and dealing with reliability issues of GaN layer transfer technology, provide a promising way in the frame of flexible electronics, where medium power, high frequency, and flexibility are needed. (C) 2017 WILEY-VCH Verlag GmbH and Co. KGaA, WeinheimShow less >
Show more >This paper reports on the fabrication and characterization of AlGaN/GaN HEMTs transfered onto two different adhesive flexible tapes. Technological improvements were made during the study concerning thermal conductivity of the tapes as well as the transfer process. In this paper, it is shown that the device transferred onto the tape with higher thermal conductivity exhibits, at VDS = 5V, a better linear power gain G(p) by 31.6% (15.8 dB instead of 12 dB), and a power added efficiency PAE rise by 111% (29.6 instead of 14%) associated with an enhancement of saturated power P-sat by 281% (420 instead of 110mWmm(-1)). Optimizing the flexible tape thermal properties and dealing with reliability issues of GaN layer transfer technology, provide a promising way in the frame of flexible electronics, where medium power, high frequency, and flexibility are needed. (C) 2017 WILEY-VCH Verlag GmbH and Co. KGaA, WeinheimShow less >
Language :
Anglais
Popular science :
Non
ANR Project :
Source :