Modeling Crack Patterns by Modified STIT ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Modeling Crack Patterns by Modified STIT Tessellations
Auteur(s) :
Leon, Roberto [Auteur]
Nagel, Werner [Auteur]
Ohser, Joachim [Auteur]
Technische Hoschschule
Arscott, Steve [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nano and Microsystems - IEMN [NAM6 - IEMN]
Nagel, Werner [Auteur]
Ohser, Joachim [Auteur]
Technische Hoschschule
Arscott, Steve [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nano and Microsystems - IEMN [NAM6 - IEMN]
Titre de la revue :
Image Analysis & Stereology
Éditeur :
International Society for Stereology
Date de publication :
2020-04-11
ISSN :
1580-3139
Mot(s)-clé(s) en anglais :
fracture pattern
geometry-statistics
Monte Carlo simulation
random tessellation
STIT tessellation
geometry-statistics
Monte Carlo simulation
random tessellation
STIT tessellation
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Résumé en anglais : [en]
Random planar tessellations are presented which are generated by subsequent division of their polygonal cells. The purpose is to develop parametric models for crack patterns appearing at length scales which can change by ...
Lire la suite >Random planar tessellations are presented which are generated by subsequent division of their polygonal cells. The purpose is to develop parametric models for crack patterns appearing at length scales which can change by orders of magnitude in areas such as nanotechnology, materials science, soft matter, and geology. Using the STIT tessellation as a reference model and comparing with phenomena in real crack patterns, three modifications of STIT are suggested. For all these models a simulation tool, which also yields several statistics for the tessellation cells, is provided on the web. The software is freely available via a link given in the bibliography of this article. The present paper contains results of a simulation study indicating some essential features of the models. Finally, an example of a real fracture pattern is considered which is obtained using the deposition of a thin metallic film onto an elastomer material-the results of this are compared to the predictions of the modelLire moins >
Lire la suite >Random planar tessellations are presented which are generated by subsequent division of their polygonal cells. The purpose is to develop parametric models for crack patterns appearing at length scales which can change by orders of magnitude in areas such as nanotechnology, materials science, soft matter, and geology. Using the STIT tessellation as a reference model and comparing with phenomena in real crack patterns, three modifications of STIT are suggested. For all these models a simulation tool, which also yields several statistics for the tessellation cells, is provided on the web. The software is freely available via a link given in the bibliography of this article. The present paper contains results of a simulation study indicating some essential features of the models. Finally, an example of a real fracture pattern is considered which is obtained using the deposition of a thin metallic film onto an elastomer material-the results of this are compared to the predictions of the modelLire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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