High Lateral Breakdown Voltage in Thin ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates
Auteur(s) :
Abid, Idriss [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Kabouche, Riad [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Bougerol, Catherine [Auteur]
Nanophysique et Semiconducteurs [NEEL - NPSC]
Pernot, Julien [Auteur]
Semi-conducteurs à large bande interdite [NEEL - SC2G]
Masante, Cédric [Auteur]
Semi-conducteurs à large bande interdite [NEEL - SC2G]
Comyn, Rémi [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Cordier, Yvon [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Kabouche, Riad [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Bougerol, Catherine [Auteur]
Nanophysique et Semiconducteurs [NEEL - NPSC]
Pernot, Julien [Auteur]
Semi-conducteurs à large bande interdite [NEEL - SC2G]
Masante, Cédric [Auteur]
Semi-conducteurs à large bande interdite [NEEL - SC2G]
Comyn, Rémi [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Cordier, Yvon [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Medjdoub, Farid [Auteur]
![refId](/themes/Mirage2//images/idref.png)
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Titre de la revue :
Micromachines
Pagination :
690
Éditeur :
MDPI
Date de publication :
2019-10
ISSN :
2072-666X
Mot(s)-clé(s) en anglais :
GaN
high-electron-mobility transistor (HEMT)
ultra-wide band gap
high-electron-mobility transistor (HEMT)
ultra-wide band gap
Discipline(s) HAL :
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Résumé en anglais : [en]
In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire. A very ...
Lire la suite >In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire. A very high lateral breakdown voltage above 10 kV was observed on the thin channel structure for large contact distances. Also, the buffer assessment revealed a remarkable breakdown field of 5 MV/cm for short contact distances, which is far beyond the theoretical limit of the GaN-based material system. The potential interest of the thin channel configuration in AlN-based high electron mobility transistors is confirmed by the much lower breakdown field that is obtained on the thick channel structure. Furthermore, fabricated transistors are fully functional on both structures with low leakage current, low on-resistance, and reduced temperature dependence as measured up to 300 • C. This is attributed to the ultra-wide bandgap AlN buffer, which is extremely promising for high power, high temperature future applications.Lire moins >
Lire la suite >In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire. A very high lateral breakdown voltage above 10 kV was observed on the thin channel structure for large contact distances. Also, the buffer assessment revealed a remarkable breakdown field of 5 MV/cm for short contact distances, which is far beyond the theoretical limit of the GaN-based material system. The potential interest of the thin channel configuration in AlN-based high electron mobility transistors is confirmed by the much lower breakdown field that is obtained on the thick channel structure. Furthermore, fabricated transistors are fully functional on both structures with low leakage current, low on-resistance, and reduced temperature dependence as measured up to 300 • C. This is attributed to the ultra-wide bandgap AlN buffer, which is extremely promising for high power, high temperature future applications.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Projet ANR :
Source :
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