A fully-integrated high-isolation transfer ...
Document type :
Communication dans un congrès avec actes
Title :
A fully-integrated high-isolation transfer switch for G-band in-situ reflectometer applications
Author(s) :
Aouimeur, Walid [Auteur]
Laboratoire de Radio-Fréquence et d'Intégration de Circuits [RFIC-Lab ]
Margalef-Rovira, Marc [Auteur]
Reliable RF and Mixed-signal Systems [TIMA-RMS]
Lauga-Larroze, Estelle [Auteur]
Laboratoire de Radio-Fréquence et d'Intégration de Circuits [RFIC-Lab ]
Gloria, Daniel [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Gaquiere, Christophe [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Alaji, Issa [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Arnould, Jean-Daniel [Auteur]
Laboratoire de Radio-Fréquence et d'Intégration de Circuits [RFIC-Lab ]
Laboratoire de Radio-Fréquence et d'Intégration de Circuits [RFIC-Lab ]
Margalef-Rovira, Marc [Auteur]
Reliable RF and Mixed-signal Systems [TIMA-RMS]
Lauga-Larroze, Estelle [Auteur]
Laboratoire de Radio-Fréquence et d'Intégration de Circuits [RFIC-Lab ]
Gloria, Daniel [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Gaquiere, Christophe [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Alaji, Issa [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Arnould, Jean-Daniel [Auteur]
Laboratoire de Radio-Fréquence et d'Intégration de Circuits [RFIC-Lab ]
Conference title :
IEEE MTT-S International Conference on Microwaves for Intelligent Mobility, ICMIM 2020
City :
Linz
Country :
Autriche
Start date of the conference :
2020-11-23
Book title :
Proceedings of IEEE MTT-S International Conference on Microwaves for Intelligent Mobility, ICMIM 2020
Publication date :
2020-04
HAL domain(s) :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
English abstract : [en]
This paper describes two fully-integrated transfer switches designed for in-situ reflectometers and Built-In Self-Test applications (BIST) in the 140 to 220 GHz band (G-band). The proposed switches were designed in the ...
Show more >This paper describes two fully-integrated transfer switches designed for in-situ reflectometers and Built-In Self-Test applications (BIST) in the 140 to 220 GHz band (G-band). The proposed switches were designed in the STMicroelectronics 55-nm BiCMOS technology using the Single-Shunt and the Double-Shunt topology, respectively. In the 140 to 195 GHz frequency range, the Double-Shunt Transfer Switch shows an isolation between 27 and 46 dB, and an insertion loss between 5 and 7 dB. Compared to the Single-Shunt Transfer Switch, the double shunt switch presents a much better isolation while having a quite comparable insertion loss and area overhead. To the best of our knowledge, the proposed switches are the first fully integrated transfer switches in BiCMOS or CMOS technologies.Show less >
Show more >This paper describes two fully-integrated transfer switches designed for in-situ reflectometers and Built-In Self-Test applications (BIST) in the 140 to 220 GHz band (G-band). The proposed switches were designed in the STMicroelectronics 55-nm BiCMOS technology using the Single-Shunt and the Double-Shunt topology, respectively. In the 140 to 195 GHz frequency range, the Double-Shunt Transfer Switch shows an isolation between 27 and 46 dB, and an insertion loss between 5 and 7 dB. Compared to the Single-Shunt Transfer Switch, the double shunt switch presents a much better isolation while having a quite comparable insertion loss and area overhead. To the best of our knowledge, the proposed switches are the first fully integrated transfer switches in BiCMOS or CMOS technologies.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
ANR Project :
Source :