GaAs spin injector microcantilever probe ...
Type de document :
Communication dans un congrès avec actes
Titre :
GaAs spin injector microcantilever probe assembly via a releasable 'epitaxial patch technology'
Auteur(s) :
Arscott, Steve [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Peytavit, Emilien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vu, Duong [Auteur]
Physique de la Matière Condensée [PMC]
Rowe, Alistair C.H. [Auteur]
Physique de la Matière Condensée [PMC]
Paget, Daniel [Auteur]
Physique de la Matière Condensée [PMC]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Peytavit, Emilien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vu, Duong [Auteur]
Physique de la Matière Condensée [PMC]
Rowe, Alistair C.H. [Auteur]
Physique de la Matière Condensée [PMC]
Paget, Daniel [Auteur]
Physique de la Matière Condensée [PMC]
Titre de la manifestation scientifique :
Proc. Eurosensors XXIV 2010
Ville :
Linz
Pays :
Autriche
Date de début de la manifestation scientifique :
2010-09-05
Date de publication :
2010-10-23
Mot(s)-clé(s) en anglais :
Microsystems
MEMS
Microtechnology
Assembly
Epitaxy
Spin
Spintronics
MEMS
Microtechnology
Assembly
Epitaxy
Spin
Spintronics
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
We demonstrate that GaAs spin injector microcantilever probes can be produced using a novel releasable “epitaxial patch technology” assembly approach as apposed to a monolithic fabrication route i.e. surface/bulk micromachining. ...
Lire la suite >We demonstrate that GaAs spin injector microcantilever probes can be produced using a novel releasable “epitaxial patch technology” assembly approach as apposed to a monolithic fabrication route i.e. surface/bulk micromachining. The GaAs microcantilevers are attached to fused silica support wafers; thus taking advantage of the optical and spin properties of GaAs and the mechanical properties of the silica. The microcantilever probes have been characterized for their spin injection properties and also used as atomic force microscopy (AFM) probes to evaluate their imagining capabilities. The assembly involved the production of released epitaxial semiconductor “patches” having a micrometer thickness. These patches are then assembled onto a pre-fabricated fused silica support wafer. AFM characterization revealed a resonant frequency and quality factor equal to commercial silicon-based AFM probes together with high quality images; the spin injection characterization demonstrated injected photocurrents of tens of nA and a spin polarization of .Lire moins >
Lire la suite >We demonstrate that GaAs spin injector microcantilever probes can be produced using a novel releasable “epitaxial patch technology” assembly approach as apposed to a monolithic fabrication route i.e. surface/bulk micromachining. The GaAs microcantilevers are attached to fused silica support wafers; thus taking advantage of the optical and spin properties of GaAs and the mechanical properties of the silica. The microcantilever probes have been characterized for their spin injection properties and also used as atomic force microscopy (AFM) probes to evaluate their imagining capabilities. The assembly involved the production of released epitaxial semiconductor “patches” having a micrometer thickness. These patches are then assembled onto a pre-fabricated fused silica support wafer. AFM characterization revealed a resonant frequency and quality factor equal to commercial silicon-based AFM probes together with high quality images; the spin injection characterization demonstrated injected photocurrents of tens of nA and a spin polarization of .Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Source :
Fichiers
- https://doi.org/10.1016/j.proeng.2010.09.287
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- https://doi.org/10.1016/j.proeng.2010.09.287
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- https://hal.archives-ouvertes.fr/hal-02345820/document
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- https://doi.org/10.1016/j.proeng.2010.09.287
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- https://doi.org/10.1016/j.proeng.2010.09.287
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- https://hal.archives-ouvertes.fr/hal-02345820/document
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- https://doi.org/10.1016/j.proeng.2010.09.287
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- 1-s2.0-S1877705810008349-main.pdf
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- j.proeng.2010.09.287
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