Ambipolar spin diffusion in p-type GaAs: ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Ambipolar spin diffusion in p-type GaAs: A case where spin diffuses more than charge
Auteur(s) :
Cadiz, Fabian [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Université Toulouse III - Paul Sabatier [UT3]
Notot, V. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Filipovic, J. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Paget, D. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Weber, C. [Auteur]
Santa Clara University
Martinelli, L. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Rowe, A. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Arscott, Steve [Auteur]
Nano and Microsystems - IEMN [NAM6 - IEMN]
Laboratoire de physique de la matière condensée [LPMC]
Université Toulouse III - Paul Sabatier [UT3]
Notot, V. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Filipovic, J. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Paget, D. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Weber, C. [Auteur]
Santa Clara University
Martinelli, L. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Rowe, A. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Arscott, Steve [Auteur]
Nano and Microsystems - IEMN [NAM6 - IEMN]
Titre de la revue :
Journal of Applied Physics
Pagination :
095703
Éditeur :
American Institute of Physics
Date de publication :
2017
ISSN :
0021-8979
Discipline(s) HAL :
Physique [physics]/Matière Condensée [cond-mat]
Résumé en anglais : [en]
We investigate the diffusion of charge and spin at 15 K in p-type GaAs, combining transient-grating and energy-resolved microluminescence measurements to cover a broad range of photoelectron density. At very low optical ...
Lire la suite >We investigate the diffusion of charge and spin at 15 K in p-type GaAs, combining transient-grating and energy-resolved microluminescence measurements to cover a broad range of photoelectron density. At very low optical power, in a unipolar nondegenerate regime, charge and spin diffuse at the same rate, implying that the spin-drag effects are negligible. Upon increasing the photoelectron concentration up to about 1016 cm–3, the charge diffusion constant decreases because of ambipolar electrostatic interactions with the slower-diffusing holes while the spin diffusion constant is reduced only weakly by the ambipolar interaction. A further increase in the excitation power causes increases in both the charge and spin diffusion constants as a consequence of the Pauli principle since the photoelectron gas becomes degenerate.Lire moins >
Lire la suite >We investigate the diffusion of charge and spin at 15 K in p-type GaAs, combining transient-grating and energy-resolved microluminescence measurements to cover a broad range of photoelectron density. At very low optical power, in a unipolar nondegenerate regime, charge and spin diffuse at the same rate, implying that the spin-drag effects are negligible. Upon increasing the photoelectron concentration up to about 1016 cm–3, the charge diffusion constant decreases because of ambipolar electrostatic interactions with the slower-diffusing holes while the spin diffusion constant is reduced only weakly by the ambipolar interaction. A further increase in the excitation power causes increases in both the charge and spin diffusion constants as a consequence of the Pauli principle since the photoelectron gas becomes degenerate.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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- Cadiz_2017_1.4985831.pdf
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