160W InAlN/GaN HEMTs amplifier at 2 GHz ...
Document type :
Communication dans un congrès avec actes
Title :
160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management
Author(s) :
Piotrowicz, Stéphane [Auteur]
Thales Research and Technology [Palaiseau]
Jardel, Olivier [Auteur]
Thales Research and Technology [Palaiseau]
Jacquet, Jean-Claude [Auteur]
Thales Research and Technology [Palaiseau]
Lancereau, D. [Auteur]
Thales Research and Technology [Palaiseau]
Aubry, Raphaël [Auteur]
Thales Research and Technology [Palaiseau]
Morvan, Erwan [Auteur]
Thales Research and Technology [Palaiseau]
Sarazin, Nicolas [Auteur]
Thales Research and Technology [Palaiseau]
Dufraisse, Jérémy [Auteur]
Thales Research and Technology [Palaiseau]
Dua, Charu [Auteur]
Thales Research and Technology [Palaiseau]
Oualli, Mourad [Auteur]
Thales Research and Technology [Palaiseau]
Chartier, Eric [Auteur]
Thales Research and Technology [Palaiseau]
Di Forte-Poisson, Marie-Antoinette [Auteur]
Thales Research and Technology [Palaiseau]
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delage, Sylvain Laurent [Auteur]
Thales Research and Technology [Palaiseau]
Thales Research and Technology [Palaiseau]
Jardel, Olivier [Auteur]
Thales Research and Technology [Palaiseau]
Jacquet, Jean-Claude [Auteur]
Thales Research and Technology [Palaiseau]
Lancereau, D. [Auteur]
Thales Research and Technology [Palaiseau]
Aubry, Raphaël [Auteur]
Thales Research and Technology [Palaiseau]
Morvan, Erwan [Auteur]
Thales Research and Technology [Palaiseau]
Sarazin, Nicolas [Auteur]
Thales Research and Technology [Palaiseau]
Dufraisse, Jérémy [Auteur]
Thales Research and Technology [Palaiseau]
Dua, Charu [Auteur]
Thales Research and Technology [Palaiseau]
Oualli, Mourad [Auteur]
Thales Research and Technology [Palaiseau]
Chartier, Eric [Auteur]
Thales Research and Technology [Palaiseau]
Di Forte-Poisson, Marie-Antoinette [Auteur]
Thales Research and Technology [Palaiseau]
Gaquiere, Christophe [Auteur]
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Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delage, Sylvain Laurent [Auteur]
Thales Research and Technology [Palaiseau]
Conference title :
34th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012
City :
La Jolla, CA
Country :
Etats-Unis d'Amérique
Start date of the conference :
2012-10-14
Book title :
Proceedings of 34th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012
Publication date :
2012
English keyword(s) :
Gallium nitride
Power amplifiers
HEMTs
MODFETs
Power generation
Thermal resistance
Current measurement
Power amplifiers
HEMTs
MODFETs
Power generation
Thermal resistance
Current measurement
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with ...
Show more >We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with a PAE of 53% were reached. Then, an amplifier was realized using 36mm power die. Thanks to an optimized thermal management, the amplifier allows us to reach an output power of 160W in pulse mode and 105W in CW. To our knowledge, these results represent the highest output powers ever reported for InAlN/GaN HEMT technology.Show less >
Show more >We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with a PAE of 53% were reached. Then, an amplifier was realized using 36mm power die. Thanks to an optimized thermal management, the amplifier allows us to reach an output power of 160W in pulse mode and 105W in CW. To our knowledge, these results represent the highest output powers ever reported for InAlN/GaN HEMT technology.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :