Piezoelectric response of PZT nanostructures ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
Piezoelectric response of PZT nanostructures obtained by focused ion beam
Auteur(s) :
Remiens, Denis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Liang, R.H. [Auteur]
Troadec, David [Auteur]
Deresmes, D. [Auteur]
Soyer, Caroline [Auteur]
Dacosta, A. [Auteur]
Desfeux, Rachel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Liang, R.H. [Auteur]
Troadec, David [Auteur]
Deresmes, D. [Auteur]
Soyer, Caroline [Auteur]
Dacosta, A. [Auteur]
Desfeux, Rachel [Auteur]
Titre de la revue :
Integrated Ferroelectrics
Pagination :
16-25
Éditeur :
Taylor & Francis
Date de publication :
2008
ISSN :
1058-4587
Mot(s)-clé(s) en anglais :
amorphous and crystallized PZT films
PZT island
sputtering
FIB Ga+ piezo
response force microscopy
PZT island
sputtering
FIB Ga+ piezo
response force microscopy
Discipline(s) HAL :
Physique [physics]/Physique [physics]
Résumé en anglais : [en]
Pb(Zrx,Ti1 - x)O3 (PZT) microscale island (1μm∼ 100nm) was fabricated by Focused Ion Beam (FIB) before and after its crystallization. In the first case the FIB etching is realized on amorphous films and a post annealing ...
Lire la suite >Pb(Zrx,Ti1 - x)O3 (PZT) microscale island (1μm∼ 100nm) was fabricated by Focused Ion Beam (FIB) before and after its crystallization. In the first case the FIB etching is realized on amorphous films and a post annealing treatment, at the crystallization temperature of the PZT films, is necessary to cristallize the film in the perovskite phase. In the second case the etching are made on crystallized films. Local electrical properties were evaluated by piezoresponse force microscopy (PFM) technique and the degradations induce in the films are studies by Raman spectroscopy. Compared to the PZT island fabricated after crystallization, the result shows that there is noticeable enhancement in nanoscale electrical properties of PZT island fabricated before crystallization, especially when the island size decreases.Lire moins >
Lire la suite >Pb(Zrx,Ti1 - x)O3 (PZT) microscale island (1μm∼ 100nm) was fabricated by Focused Ion Beam (FIB) before and after its crystallization. In the first case the FIB etching is realized on amorphous films and a post annealing treatment, at the crystallization temperature of the PZT films, is necessary to cristallize the film in the perovskite phase. In the second case the etching are made on crystallized films. Local electrical properties were evaluated by piezoresponse force microscopy (PFM) technique and the degradations induce in the films are studies by Raman spectroscopy. Compared to the PZT island fabricated after crystallization, the result shows that there is noticeable enhancement in nanoscale electrical properties of PZT island fabricated before crystallization, especially when the island size decreases.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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