Band offsets, wells, and barriers at ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
Band offsets, wells, and barriers at nanoscale semiconductor heterojunctions
Auteur(s) :
Niquet, Y.M. [Auteur]
Laboratory of Atomistic Simulation [LSIM ]
Service de Physique des Matériaux et Microstructures [SP2M - UMR 9002]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laboratory of Atomistic Simulation [LSIM ]
Service de Physique des Matériaux et Microstructures [SP2M - UMR 9002]
Delerue, Christophe [Auteur]
![refId](/themes/Mirage2//images/idref.png)
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Pagination :
075478
Éditeur :
American Physical Society
Date de publication :
2011
ISSN :
1098-0121
Discipline(s) HAL :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Résumé en anglais : [en]
Epitaxially grown semiconductor heterostructures make it possible to tailor the potential landscape for the carriers in a very controlled way. In planar lattice-matched heterostructures, the potential has indeed a very ...
Lire la suite >Epitaxially grown semiconductor heterostructures make it possible to tailor the potential landscape for the carriers in a very controlled way. In planar lattice-matched heterostructures, the potential has indeed a very simple and easily predictable behavior: it is constant everywhere except at the interfaces, where there is a step (discontinuity) that only depends on the composition of the semiconductors in contact. In this paper, we show that this universally accepted picture can be invalid in nanoscale heterostructures (e.g., quantum dots, rods, nanowires), which can presently be fabricated in a large variety of forms. Self-consistent tight-binding calculations applied to systems containing up to 75 000 atoms indeed demonstrate that the potential may have a more complex behavior in axial heteronanostructures: The band edges can show significant variations far from the interfaces if the nanostructures are not capped with a homogeneous shell. These results suggest new strategies to engineer the electronic properties of nanoscale objects, e.g., for sensors and photovoltaics.Lire moins >
Lire la suite >Epitaxially grown semiconductor heterostructures make it possible to tailor the potential landscape for the carriers in a very controlled way. In planar lattice-matched heterostructures, the potential has indeed a very simple and easily predictable behavior: it is constant everywhere except at the interfaces, where there is a step (discontinuity) that only depends on the composition of the semiconductors in contact. In this paper, we show that this universally accepted picture can be invalid in nanoscale heterostructures (e.g., quantum dots, rods, nanowires), which can presently be fabricated in a large variety of forms. Self-consistent tight-binding calculations applied to systems containing up to 75 000 atoms indeed demonstrate that the potential may have a more complex behavior in axial heteronanostructures: The band edges can show significant variations far from the interfaces if the nanostructures are not capped with a homogeneous shell. These results suggest new strategies to engineer the electronic properties of nanoscale objects, e.g., for sensors and photovoltaics.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Projet ANR :
Source :
Fichiers
- http://arxiv.org/pdf/1106.1088
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- https://hal.archives-ouvertes.fr/hal-00639883/document
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- https://hal.archives-ouvertes.fr/hal-00639883/document
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- Niquet%20_2011_PhysRevB.84.075478.pdf
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- 1106.1088
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