Initial stages of graphitization on ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Initial stages of graphitization on SiC(000-1), as studied by phase atomic force microscopy
Author(s) :
Ferrer, F.J. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Moreau, E. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vignaud, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Deresmes, D. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Godey, Sylvie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Wallart, Xavier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Moreau, E. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vignaud, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Deresmes, D. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Godey, Sylvie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Wallart, Xavier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Journal of Applied Physics
Pages :
054307-1-6
Publisher :
American Institute of Physics
Publication date :
2011
ISSN :
0021-8979
HAL domain(s) :
Chimie/Matériaux
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
English abstract : [en]
The initial stages of graphitization on 4H- and 6H-SiC (000-1) under ultrahigh vacuum at temperatures of 1125–1175°C have been studied by atomic force microscopy (AFM), X-ray photoemission spectroscopy and reflected high ...
Show more >The initial stages of graphitization on 4H- and 6H-SiC (000-1) under ultrahigh vacuum at temperatures of 1125–1175°C have been studied by atomic force microscopy (AFM), X-ray photoemission spectroscopy and reflected high energy electron diffraction. A progressive coverage of the surface by graphene has been observed depending on the time and temperature of annealing. Graphene growth mainly starts from the step edges, although it sometimes nucleates in the middle of a SiC terrace. Comparison of the topographic and phase AFM images shows that the latter are the most efficient for identifying graphene before complete coverage of the surfaceShow less >
Show more >The initial stages of graphitization on 4H- and 6H-SiC (000-1) under ultrahigh vacuum at temperatures of 1125–1175°C have been studied by atomic force microscopy (AFM), X-ray photoemission spectroscopy and reflected high energy electron diffraction. A progressive coverage of the surface by graphene has been observed depending on the time and temperature of annealing. Graphene growth mainly starts from the step edges, although it sometimes nucleates in the middle of a SiC terrace. Comparison of the topographic and phase AFM images shows that the latter are the most efficient for identifying graphene before complete coverage of the surfaceShow less >
Language :
Anglais
Popular science :
Non
Source :
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