The interface between a polar perovskite ...
Type de document :
Pré-publication ou Document de travail
Titre :
The interface between a polar perovskite oxide and silicon from monoatomic lines
Auteur(s) :
Devos, Isabelle [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Boulenc, Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Boulenc, Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mot(s)-clé(s) en anglais :
high-k dielectrics
interface
band offset
density functional theory
interface
band offset
density functional theory
Discipline(s) HAL :
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Résumé en anglais : [en]
We report a study on the interface between polar high-k materials and the Si(001)-(2X1) reconstructed surface with LaAlO3 taken as a prototype material. The construction of the interface is based on the prior growth of ...
Lire la suite >We report a study on the interface between polar high-k materials and the Si(001)-(2X1) reconstructed surface with LaAlO3 taken as a prototype material. The construction of the interface is based on the prior growth of metal lines followed by oxidation, whose stability against oxygen coverage is studied. Electronic structure calculations within the Density Functional Theory framework help in building the interface and understanding its bonding structure. Moreover, we computed a conduction band offset of 1.9 eV, in agreement with electronic applications requirement. The results may provide a guidance for interface processing.Lire moins >
Lire la suite >We report a study on the interface between polar high-k materials and the Si(001)-(2X1) reconstructed surface with LaAlO3 taken as a prototype material. The construction of the interface is based on the prior growth of metal lines followed by oxidation, whose stability against oxygen coverage is studied. Electronic structure calculations within the Density Functional Theory framework help in building the interface and understanding its bonding structure. Moreover, we computed a conduction band offset of 1.9 eV, in agreement with electronic applications requirement. The results may provide a guidance for interface processing.Lire moins >
Langue :
Anglais
Source :
Fichiers
- https://hal.archives-ouvertes.fr/hal-00087421v2/document
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- http://arxiv.org/pdf/cond-mat/0607609
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- https://hal.archives-ouvertes.fr/hal-00087421v2/document
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- https://hal.archives-ouvertes.fr/hal-00087421v2/document
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- document
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- Al2O5_1A_revised_2.pdf
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- 0607609
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