94 GHz pulsed silicon IMPATT oscillator modelling
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
94 GHz pulsed silicon IMPATT oscillator modelling
Auteur(s) :
Beaussart, Stéphane [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Perrin, Olivier [Auteur]
Friscourt, Marie-Renée [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dalle, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Perrin, Olivier [Auteur]
Friscourt, Marie-Renée [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dalle, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
IEEE Transactions on Microwave Theory and Techniques
Pagination :
1382-1390
Éditeur :
Institute of Electrical and Electronics Engineers
Date de publication :
1998
ISSN :
0018-9480
Mot(s)-clé(s) en anglais :
Silicon
Oscillators
Semiconductor diodes
Radio frequency
Time domain analysis
Temperature
Numerical models
Isothermal processes
Circuits
Radar
Oscillators
Semiconductor diodes
Radio frequency
Time domain analysis
Temperature
Numerical models
Isothermal processes
Circuits
Radar
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
A new type of 94-GHz pulsed silicon impact avalanche and transit time (IMPATT) oscillator numerical modeling is described. It consists of a set of three models of increasing complexity; namely, a pure sine model, time-domain ...
Lire la suite >A new type of 94-GHz pulsed silicon impact avalanche and transit time (IMPATT) oscillator numerical modeling is described. It consists of a set of three models of increasing complexity; namely, a pure sine model, time-domain isothermal model, and time-domain electro-thermal model, which basically rely on a diode one-dimensional bipolar drift-diffusion model embedded in a time-domain circuit modeling. In this paper, they are first used to investigate the 94-GHz diode intrinsic operation and performance. Secondly, the load-impedance level has been optimized. In each case, the thermal behavior is especially considered. Thirdly, pulse-operation-simulation results are compared with experiments performed at Thomson CSF, Radars et Contre-Mesures, Elancourt, France. Finally, some improvements of the present modeling are discussed in Section VI.Lire moins >
Lire la suite >A new type of 94-GHz pulsed silicon impact avalanche and transit time (IMPATT) oscillator numerical modeling is described. It consists of a set of three models of increasing complexity; namely, a pure sine model, time-domain isothermal model, and time-domain electro-thermal model, which basically rely on a diode one-dimensional bipolar drift-diffusion model embedded in a time-domain circuit modeling. In this paper, they are first used to investigate the 94-GHz diode intrinsic operation and performance. Secondly, the load-impedance level has been optimized. In each case, the thermal behavior is especially considered. Thirdly, pulse-operation-simulation results are compared with experiments performed at Thomson CSF, Radars et Contre-Mesures, Elancourt, France. Finally, some improvements of the present modeling are discussed in Section VI.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :