1-octadecene monolayers on Si(111) ...
Type de document :
Pré-publication ou Document de travail
Titre :
1-octadecene monolayers on Si(111) hydrogen-terminated surfaces: effects of substrate doping.
Auteur(s) :
Miramond, Corinne [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vuillaume, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vuillaume, Dominique [Auteur]
![refId](/themes/Mirage2//images/idref.png)
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Discipline(s) HAL :
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Physique [physics]/Matière Condensée [cond-mat]/Matière Molle [cond-mat.soft]
Chimie/Matériaux
Physique [physics]/Matière Condensée [cond-mat]/Matière Molle [cond-mat.soft]
Chimie/Matériaux
Résumé en anglais : [en]
We have studied the electronic properties, in relation to their structural properties, of monolayers of 1-octadecene attached on a hydrogen-terminated (111) silicon surface. The molecules are attached using the free-radical ...
Lire la suite >We have studied the electronic properties, in relation to their structural properties, of monolayers of 1-octadecene attached on a hydrogen-terminated (111) silicon surface. The molecules are attached using the free-radical reaction between C=C and Si-H activated by an ultraviolet illumination. We have compared the structural and electrical properties of monolayers formed on silicon substrate of different types (n-type and p-type) and different doping concentrations from low-doped (~1E14 cm-3) to highly doped (~1E19 cm-3) silicon substrates. We show that the monolayers on n-, p- and p+ silicon are densely packed and that they act as very good insulating films at a nanometer thickness with leakage currents as low as ~1E-7 A.cm-2 and high quality capacitance-voltage characteristics. The monolayers formed on n+-type silicon are more disordered and therefore exhibit larger leakage current densities (>1E-4 A.cm-2) when embedded in a silicon/monolayer/metal junction. The inferior structural and electronic properties obtained with n+-type silicon pinpoint the important role of surface potential and of the position of the surface Fermi level during the chemisorption of the organic monolayers.Lire moins >
Lire la suite >We have studied the electronic properties, in relation to their structural properties, of monolayers of 1-octadecene attached on a hydrogen-terminated (111) silicon surface. The molecules are attached using the free-radical reaction between C=C and Si-H activated by an ultraviolet illumination. We have compared the structural and electrical properties of monolayers formed on silicon substrate of different types (n-type and p-type) and different doping concentrations from low-doped (~1E14 cm-3) to highly doped (~1E19 cm-3) silicon substrates. We show that the monolayers on n-, p- and p+ silicon are densely packed and that they act as very good insulating films at a nanometer thickness with leakage currents as low as ~1E-7 A.cm-2 and high quality capacitance-voltage characteristics. The monolayers formed on n+-type silicon are more disordered and therefore exhibit larger leakage current densities (>1E-4 A.cm-2) when embedded in a silicon/monolayer/metal junction. The inferior structural and electronic properties obtained with n+-type silicon pinpoint the important role of surface potential and of the position of the surface Fermi level during the chemisorption of the organic monolayers.Lire moins >
Langue :
Anglais
Commentaire :
33 pages, 8 figures, to be published J. Appl. Phys.
Source :
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- https://hal.archives-ouvertes.fr/hal-00001568/document
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- https://hal.archives-ouvertes.fr/hal-00001568/file/1-octadecene-JAP.pdf
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- http://arxiv.org/pdf/cond-mat/0405361
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- https://hal.archives-ouvertes.fr/hal-00001568/document
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- 1-octadecene-JAP-low_res.pdf
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- 1-octadecene-JAP.pdf
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- 0405361
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