Impact of forward body-biasing on ultra-low ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
Impact of forward body-biasing on ultra-low voltage switched-capacitor RF power amplifier in 28 nm FD-SOI
Auteur(s) :
Tochou, Guillaume [Auteur correspondant]
STMicroelectronics [Crolles] [ST-CROLLES]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Berkeley Wireless Research Center [Berkeley] [BWRC]
Cathelin, Andreia [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Frappe, Antoine [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kaiser, Andreas [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rabaey, Jan [Auteur]
Berkeley Wireless Research Center [Berkeley] [BWRC]
STMicroelectronics [Crolles] [ST-CROLLES]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Berkeley Wireless Research Center [Berkeley] [BWRC]
Cathelin, Andreia [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Frappe, Antoine [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kaiser, Andreas [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rabaey, Jan [Auteur]
Berkeley Wireless Research Center [Berkeley] [BWRC]
Titre de la revue :
IEEE Transactions on Circuits and Systems II: Express Briefs
Pagination :
50-54
Éditeur :
Institute of Electrical and Electronics Engineers
Date de publication :
2022-01
ISSN :
1549-7747
Mot(s)-clé(s) en anglais :
IoT
SCPA
ULV
Class-D PA
Low-Power
CMOS
RF
28 nm FD-SOI
SCPA
ULV
Class-D PA
Low-Power
CMOS
RF
28 nm FD-SOI
Discipline(s) HAL :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Résumé en anglais : [en]
The Switched-Capacitor Power Amplifier (SCPA) has become a key enabler for modern wireless communication because of its high efficiency, high linearity, and high integrability. This paper discusses the impact of the extended ...
Lire la suite >The Switched-Capacitor Power Amplifier (SCPA) has become a key enabler for modern wireless communication because of its high efficiency, high linearity, and high integrability. This paper discusses the impact of the extended Forward Body-Biasing (FBB) feature in 28 nm FD-SOI technology on Ultra-Low Voltage (ULV) SCPA. A new model of the Drain Efficiency (DE) and System Efficiency (SE) including body-biasing and drivers power consumption is introduced and validated with SpectreRF simulations. FBB on the SCPA improves by up to 14 % and 67 % the SE and transistors area, respectively, compared to a nominally body-biased SCPA under 0.5 V supply voltage at 2.4 GHz, while improving linearity and enhancing PVT variations.Lire moins >
Lire la suite >The Switched-Capacitor Power Amplifier (SCPA) has become a key enabler for modern wireless communication because of its high efficiency, high linearity, and high integrability. This paper discusses the impact of the extended Forward Body-Biasing (FBB) feature in 28 nm FD-SOI technology on Ultra-Low Voltage (ULV) SCPA. A new model of the Drain Efficiency (DE) and System Efficiency (SE) including body-biasing and drivers power consumption is introduced and validated with SpectreRF simulations. FBB on the SCPA improves by up to 14 % and 67 % the SE and transistors area, respectively, compared to a nominally body-biased SCPA under 0.5 V supply voltage at 2.4 GHz, while improving linearity and enhancing PVT variations.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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