Theory of Localized Surface Plasmon Resonance in Doped Semiconductor Nanocrystals

Delerue, Christophe

Type de document :

Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes: Conférence invitée

DOI :

10.29363/nanoge.nfm.2018.191

Titre :

Theory of Localized Surface Plasmon Resonance in Doped Semiconductor Nanocrystals

Auteur(s) :

Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Physique - IEMN [PHYSIQUE - IEMN]

Titre de la manifestation scientifique :

International Conference on Fundamental Processes in Semiconductor Nanocrystals, nanoGe Fall Meeting 2018

Ville :

Torremolinos, Malaga

Pays :

Espagne

Date de début de la manifestation scientifique :

2018-10-22

Discipline(s) HAL :

Physique [physics]/Matière Condensée [cond-mat]

Résumé en anglais : [en]

Nanocrystals of heavily-doped semiconductors have recently emerged as very promising materials for plasmonics. In contrast to nanocrystals of noble metals, their Localized Surface Plasmon Resonance (LSPR) can be easily ...
Lire la suite >Nanocrystals of heavily-doped semiconductors have recently emerged as very promising materials for plasmonics. In contrast to nanocrystals of noble metals, their Localized Surface Plasmon Resonance (LSPR) can be easily tuned in energy by controlling the carrier concentration through doping. In addition, due to the low concentration of carriers compared to metals, the LSPR can be extended to infrared and near-infrared ranges. Recent experimental studies have demonstrated the existence of LSPR in doped nanocrystals of Si and different types of oxides (ZnO, SnO2, In2O3). However, the physics of the LSPR in these NCs is not totally understood. In this talk, I will review recent theoretical studies performed to clarify a certain number of issues. The evolution with doping concentration of the optical processes from single-electron transitions to collective excitations will be described. The conditions required for the emergence of plasmonic modes will be discussed. The results of atomistic calculations will be compared with those of more classical approaches. The intrinsic mechanisms at the origin of plasmon damping in doped ZnO nanocrystals will be analyzed. In this case, the theoretical simulations show that the intrinsic line width of the LSPR can be below 80 meV, in agreement with recent experiments [1]. These results conﬁrm that doped ZnO nanocrystals are very promising for the development of IR plasmonics.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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