Title :

Affirming nonlinear optical coefficient constancy from z-scan measurement

Author(s) :

Hua, Shijia [Auteur]
Du, Kang [Auteur]
Wang, Heng [Auteur]
Zhang, Wending [Auteur]
Mei, Ting [Auteur correspondant]
Dogheche, El Hadj [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Chinese Optics Letters

Pages :

071903, 5 pages

Publisher :

Optical Society of America

Publication date :

2020-07-10

ISSN :

1671-7694

English keyword(s) :

z-scan technique
nonlinear refraction and absorption
nonlinear optical coefficient
carbon disulfide

HAL domain(s) :

Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]/Acoustique [physics.class-ph]
Sciences de l'ingénieur [physics]/Optique / photonique

English abstract : [en]

Goodness of fit is demonstrated for theoretical calculation of z-scan data based on beams propagating in the nonlinear medium and the Fresnel-Kirchhoff diffraction integral in experiments with high nonlinear refraction and ...
Show more >Goodness of fit is demonstrated for theoretical calculation of z-scan data based on beams propagating in the nonlinear medium and the Fresnel-Kirchhoff diffraction integral in experiments with high nonlinear refraction and absorption. The constancy of nonlinear optical parameters is achieved regardless of sample thickness and laser intensity, which clarifies the physical significance of optical parameters. We have obtained gamma = 2.0 x 10(-19) m(2)/W and beta = 5.0 x 10(-13) m/W for carbon disulfide excited by a pulsed laser at 800 nm with pulse duration of 35 fs, which are independent of sample thickness and laser intensity. Affirming constancy of the extracted parameters to the incident light intensity may become a practice to verify the goodness of the z-scan experiment.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL