Quantum Dot Acceptors in Two-Dimensional ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
PMID :
Title :
Quantum Dot Acceptors in Two-Dimensional Epitaxially Fused PbSe Quantum Dot Superlattices
Author(s) :
Notot, Vincent [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Walravens, Willem [Auteur]
Universiteit Gent = Ghent University [UGENT]
Berthe, Maxime [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Peric, Nemanja [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Addad, Ahmed [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Wallart, Xavier [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delerue, Christophe [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Hens, Zeger [Auteur]
Universiteit Gent = Ghent University [UGENT]
Grandidier, Bruno [Auteur correspondant]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Biadala, Louis [Auteur correspondant]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Walravens, Willem [Auteur]
Universiteit Gent = Ghent University [UGENT]
Berthe, Maxime [Auteur]
![refId](/themes/Mirage2//images/idref.png)
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Peric, Nemanja [Auteur]
![refId](/themes/Mirage2//images/idref.png)
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Addad, Ahmed [Auteur]
![refId](/themes/Mirage2//images/idref.png)
Unité Matériaux et Transformations - UMR 8207 [UMET]
Wallart, Xavier [Auteur]
![refId](/themes/Mirage2//images/idref.png)
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delerue, Christophe [Auteur]
![refId](/themes/Mirage2//images/idref.png)
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Hens, Zeger [Auteur]
Universiteit Gent = Ghent University [UGENT]
Grandidier, Bruno [Auteur correspondant]
![refId](/themes/Mirage2//images/idref.png)
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Biadala, Louis [Auteur correspondant]
![refId](/themes/Mirage2//images/idref.png)
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
ACS Nano
Pages :
3081–3091
Publisher :
American Chemical Society
Publication date :
2022-02-22
ISSN :
1936-0851
English keyword(s) :
nanocrystal assemblies
quantum dot superlattice
electronic coupling
doping
defects
scanning tunneling microscopy
quantum dot superlattice
electronic coupling
doping
defects
scanning tunneling microscopy
HAL domain(s) :
Physique [physics]/Matière Condensée [cond-mat]
English abstract : [en]
Oriented attachment of colloidal quantum dots allows the growth of two-dimensional crystals by design, which could have striking electronic properties upon progress on manipulating their conductivity. Here, we explore the ...
Show more >Oriented attachment of colloidal quantum dots allows the growth of two-dimensional crystals by design, which could have striking electronic properties upon progress on manipulating their conductivity. Here, we explore the origin of doping in square and epitaxially fused PbSe quantum dot superlattices with low-temperature scanning tunneling microscopy and spectroscopy. Probing the density of states of numerous individual quantum dots reveals an electronic coupling between the hole ground states of the quantum dots. Moreover, a small amount of quantum dots shows a reproducible deep level in the band gap, which is not caused by structural defects in the connections but arises from unpassivated sites at the {111} facets. Based on semiconductor statistics, these distinct defective quantum dots, randomly distributed in the superlattice, trap electrons, releasing a concentration of free holes, which is intimately related to the interdot electronic coupling. They act as acceptor quantum dots in the host quantum dot lattice, mimicking the role of dopant atoms in a semiconductor crystal.Show less >
Show more >Oriented attachment of colloidal quantum dots allows the growth of two-dimensional crystals by design, which could have striking electronic properties upon progress on manipulating their conductivity. Here, we explore the origin of doping in square and epitaxially fused PbSe quantum dot superlattices with low-temperature scanning tunneling microscopy and spectroscopy. Probing the density of states of numerous individual quantum dots reveals an electronic coupling between the hole ground states of the quantum dots. Moreover, a small amount of quantum dots shows a reproducible deep level in the band gap, which is not caused by structural defects in the connections but arises from unpassivated sites at the {111} facets. Based on semiconductor statistics, these distinct defective quantum dots, randomly distributed in the superlattice, trap electrons, releasing a concentration of free holes, which is intimately related to the interdot electronic coupling. They act as acceptor quantum dots in the host quantum dot lattice, mimicking the role of dopant atoms in a semiconductor crystal.Show less >
Language :
Anglais
Popular science :
Non
ANR Project :
Source :
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