Title :

Temperature dependence of transport mechanisms in organic multiferroic tunnel junctions

Author(s) :

Xiao, Can [Auteur]
Sun, Huawei [Auteur]
Cheng, Luming [Auteur]
Devaux, Xavier [Auteur]
Ferri, Anthony [Auteur]
UCCS Équipe Couches Minces & Nanomatériaux
Huang, Weichuan [Auteur]
Desfeux, Rachel [Auteur]
UCCS Équipe Couches Minces & Nanomatériaux
Li, Xiaoguang [Auteur]
Migot, Sylvie [Auteur]
Chshiev, Mairbek [Auteur]
Rauf, Sajid [Auteur]
Qi, Yajun [Auteur]
Wang, Ruilong [Auteur]
Zhang, Tianjin [Auteur]
Yang, Changping [Auteur]
Liang, Shiheng [Auteur]
Lu, Yuan [Auteur]

Journal title :

Journal of Physics D. Applied Physics

Abbreviated title :

J. phys., D, Appl. phys.

Volume number :

53

Pages :

325301

Publisher :

IOP Publishing

Publication date :

2020-08-05

ISSN :

0022-3727

HAL domain(s) :

Physique [physics]

English abstract : [en]

Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of memristor and spintronics based synapse ...
Show more >Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of memristor and spintronics based synapse devices. The ferroelectric control of spin-polarization at ferromagnet (FM)\/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized. However, there is still a lack of understanding of the transport properties in OMFTJs, especially the interplay between the ferroelectric domain structure in the organic barrier and the spin-polarized electron tunneling through the barrier. Here, we report on a systematic study of the temperature dependent transport behavior in La0.6Sr0.4MnO3\/PVDF\/Co OMFTJs. It is found that the thermal fluctuation of the ferroelectric domains plays an important role on the transport properties. When T>120K, the opposite temperature dependence of resistance for in up and down ferroelectric polarization states results in a rapid diminishing of tunneling electroresistance. These results contribute to the understanding of the transport properties for designing high performance OMFTJs for memristor and spintronics applications.Show less >

Language :

Anglais

Audience :

Internationale

Popular science :

Non

Administrative institution(s) :

CNRS
Centrale Lille
ENSCL
Univ. Artois
Université de Lille

Collections :

• Unité de Catalyse et Chimie du Solide (UCCS) - UMR 8181

Research team(s) :

Couches minces & nanomatériaux (CMNM)

Submission date :

2022-03-08T13:51:32Z