Towards highly efficient high power X‐band ...
Type de document :
Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes
Titre :
Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V
Auteur(s) :
Harrouche, Kathia [Auteur correspondant]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Vankatachalam, Sri Saran [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Grandpierron, François [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Okada, Etienne [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Medjdoub, Farid [Auteur correspondant]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Vankatachalam, Sri Saran [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Grandpierron, François [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Okada, Etienne [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Medjdoub, Farid [Auteur correspondant]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Titre de la manifestation scientifique :
European Conference on Renewable Energy Systems (ECRES 2022)
Ville :
Istanbul
Pays :
Turquie
Date de début de la manifestation scientifique :
2022-05-07
Date de publication :
2022
Discipline(s) HAL :
Physique [physics]
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
We report on AlN/GaN MISHEMT technology on SiC substrate for X-band applications. Transistors with 100 nm gate lengths deliver a high off-state breakdown voltage above 180V and 110 V in semi-on state. RF small signal ...
Lire la suite >We report on AlN/GaN MISHEMT technology on SiC substrate for X-band applications. Transistors with 100 nm gate lengths deliver a high off-state breakdown voltage above 180V and 110 V in semi-on state. RF small signal measurements up to a drain bias (VDS) as high as 70V for two different gate lengths (LG). The maximum oscillation frequency (Fmax) strongly increases versus VDS. As a result, Ft/Fmax of 29/276 GHz with a power gain (Umax) of 28 dB at 10 GHz and VDS = 70V has been extracted. To the best of our knowledge, this is the highest small signal power gain achieved at a drain bias of 70 V. These results are attributed to the favorable AlN/GaN epi-design for high frequency operation while inserting a gate dielectric to prevent the gate leakage current and related device degradation under high electric field. Continuous wave (CW) power performances have been assessed at 10 GHz and VDS = 50V in deep class AB operation. A high output power density of 29.1 dBm (8 W/mm) was measured at the peak power added efficiency (PAE) close to 50%. It can be noticed that no-degradation of the transistors occurred subsequently to many load pull sweeps up to VDS = 50V, reflecting the promising device robustness under harsh conditions. These results pave the way for superior X-band performances operating beyond 50 V in a reliable way.Lire moins >
Lire la suite >We report on AlN/GaN MISHEMT technology on SiC substrate for X-band applications. Transistors with 100 nm gate lengths deliver a high off-state breakdown voltage above 180V and 110 V in semi-on state. RF small signal measurements up to a drain bias (VDS) as high as 70V for two different gate lengths (LG). The maximum oscillation frequency (Fmax) strongly increases versus VDS. As a result, Ft/Fmax of 29/276 GHz with a power gain (Umax) of 28 dB at 10 GHz and VDS = 70V has been extracted. To the best of our knowledge, this is the highest small signal power gain achieved at a drain bias of 70 V. These results are attributed to the favorable AlN/GaN epi-design for high frequency operation while inserting a gate dielectric to prevent the gate leakage current and related device degradation under high electric field. Continuous wave (CW) power performances have been assessed at 10 GHz and VDS = 50V in deep class AB operation. A high output power density of 29.1 dBm (8 W/mm) was measured at the peak power added efficiency (PAE) close to 50%. It can be noticed that no-degradation of the transistors occurred subsequently to many load pull sweeps up to VDS = 50V, reflecting the promising device robustness under harsh conditions. These results pave the way for superior X-band performances operating beyond 50 V in a reliable way.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Projet ANR :
Source :
Fichiers
- https://hal.archives-ouvertes.fr/hal-03677311/file/abstract_ECRES_Kathia-2.pdf
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- abstract_ECRES_Kathia-2.pdf
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