High Breakdown Field and Low Trapping ...
Type de document :
Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes
Titre :
High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures
Auteur(s) :
Abid, Idriss [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Hamdaoui, Youssef [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Mehta, Jash Rinku [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Medjdoub, Farid [Auteur correspondant]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Hamdaoui, Youssef [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Mehta, Jash Rinku [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Medjdoub, Farid [Auteur correspondant]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Titre de la manifestation scientifique :
European Conference on Renewable Energy Systems (ECRES 2022)
Ville :
Istanbul
Pays :
Turquie
Date de début de la manifestation scientifique :
2022-05-07
Date de publication :
2022
Discipline(s) HAL :
Physique [physics]
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
In this study, we report on the development of a fully normally-off high electron mobility transistor (HEMT) gallium nitride on silicon (GaN-on-Si) heterostructures designed for high voltage operation. The normally-off ...
Lire la suite >In this study, we report on the development of a fully normally-off high electron mobility transistor (HEMT) gallium nitride on silicon (GaN-on-Si) heterostructures designed for high voltage operation. The normally-off configuration was achieved by means of a p-gallium nitride (p-GaN) cap layer enabling a positive threshold voltage higher than +1 V. The high voltage operation was ensured with a bufferbased on AlN/GaN superlattice (SL) delivering a vertical breakdown voltage about 1.1 kV for a leakage current density of 1mA/cm². With the substrate grounded, hard breakdown voltage transistors at VGS = 0V is about 1.45 kV, corresponding to an outstanding breakdown field higher than 2.4 MV/cm. High voltage characterizations revealed a state of the art combination of breakdown voltage at VGS = 0V together with low electron trapping effects up to 1.4 kV as assessed by means of substrate ramp measurements.Lire moins >
Lire la suite >In this study, we report on the development of a fully normally-off high electron mobility transistor (HEMT) gallium nitride on silicon (GaN-on-Si) heterostructures designed for high voltage operation. The normally-off configuration was achieved by means of a p-gallium nitride (p-GaN) cap layer enabling a positive threshold voltage higher than +1 V. The high voltage operation was ensured with a bufferbased on AlN/GaN superlattice (SL) delivering a vertical breakdown voltage about 1.1 kV for a leakage current density of 1mA/cm². With the substrate grounded, hard breakdown voltage transistors at VGS = 0V is about 1.45 kV, corresponding to an outstanding breakdown field higher than 2.4 MV/cm. High voltage characterizations revealed a state of the art combination of breakdown voltage at VGS = 0V together with low electron trapping effects up to 1.4 kV as assessed by means of substrate ramp measurements.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Projet ANR :
Commentaire :
222, session 2A, A Nano-scale production and characterization
Source :
Fichiers
- https://hal.archives-ouvertes.fr/hal-03677266/file/Abstract%20Idriss%20ECRES2022.pdf
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