High Breakdown Field and Low Trapping Effects up to 1400 V  in Normally Off GaN‐on‐Silicon Heterostructures

Abid, Idriss; Hamdaoui, Youssef; Mehta, Jash; Medjdoub, Farid

Document type :

Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes

Title :

High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures

Author(s) :

Abid, Idriss [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Hamdaoui, Youssef [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mehta, Jash [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Medjdoub, Farid [Auteur correspondant]

WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

European Conference on Renewable Energy Systems (ECRES 2022)

City :

Istanbul

Country :

Turquie

Start date of the conference :

2022-05-07

Publication date :

2022

HAL domain(s) :

Physique [physics]
Sciences de l'ingénieur [physics]

English abstract : [en]

In this study, we report on the development of a fully normally-off high electron mobility transistor (HEMT) gallium nitride on silicon (GaN-on-Si) heterostructures designed for high voltage operation. The normally-off ...
Show more >In this study, we report on the development of a fully normally-off high electron mobility transistor (HEMT) gallium nitride on silicon (GaN-on-Si) heterostructures designed for high voltage operation. The normally-off configuration was achieved by means of a p-gallium nitride (p-GaN) cap layer enabling a positive threshold voltage higher than +1 V. The high voltage operation was ensured with a bufferbased on AlN/GaN superlattice (SL) delivering a vertical breakdown voltage about 1.1 kV for a leakage current density of 1mA/cm². With the substrate grounded, hard breakdown voltage transistors at VGS = 0V is about 1.45 kV, corresponding to an outstanding breakdown field higher than 2.4 MV/cm. High voltage characterizations revealed a state of the art combination of breakdown voltage at VGS = 0V together with low electron trapping effects up to 1.4 kV as assessed by means of substrate ramp measurements.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Comment :

222, session 2A, A Nano-scale production and characterization

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Files

https://hal.archives-ouvertes.fr/hal-03677266/file/Abstract%20Idriss%20ECRES2022.pdf
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