Modeling and de-embedding the interferometric ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Modeling and de-embedding the interferometric scanning microwave microscopy by means of dopant profile calibration
Auteur(s) :
Michalas, L. [Auteur]
Istituto per la Microelettronica e Microsistemi [Roma] [IMM]
Wang, Fei [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Brillard, Charlene [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chevalier, Nicolas [Auteur]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Hartmann, Jean-Michel [Auteur]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Marcelli, Romolo [Auteur]
Istituto per la Microelettronica e Microsistemi [Roma] [IMM]
Théron, Didier [Auteur]
Nano and Microsystems - IEMN [NAM6 - IEMN]
Istituto per la Microelettronica e Microsistemi [Roma] [IMM]
Wang, Fei [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Brillard, Charlene [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chevalier, Nicolas [Auteur]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Hartmann, Jean-Michel [Auteur]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Marcelli, Romolo [Auteur]
Istituto per la Microelettronica e Microsistemi [Roma] [IMM]
Théron, Didier [Auteur]
![refId](/themes/Mirage2//images/idref.png)
Nano and Microsystems - IEMN [NAM6 - IEMN]
Titre de la revue :
Applied Physics Letters
Pagination :
223102
Éditeur :
American Institute of Physics
Date de publication :
2015
ISSN :
0003-6951
Discipline(s) HAL :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Traitement du signal et de l'image [eess.SP]
Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Traitement du signal et de l'image [eess.SP]
Résumé en anglais : [en]
This paper presents the full modeling and a methodology for de-embedding the interferometric scanning microwave microscopy measurements by means of dopant profile calibration. A Si calibration sample with different ...
Lire la suite >This paper presents the full modeling and a methodology for de-embedding the interferometric scanning microwave microscopy measurements by means of dopant profile calibration. A Si calibration sample with different boron-doping level areas is used to that end. The analysis of the experimentally obtained S11 amplitudes based on the proposed model confirms the validity of the methodology. As a specific finding, changes in the tip radius between new and used tips have been clearly identified, leading to values for the effective tip radius in the range of 45 nm to 85 nm, respectively. Experimental results are also discussed in terms of the effective area concept, taking into consideration details related to the nature of tip-to-sample interaction.The authors wish to acknowledge the support from EC by means of “Marie Curie” fellowship in the framework of PEOPLE-2012-ITN project: Microwave Nanotechnology for Semiconductor and Life Science—NANOMICROWAVE, under GA: 317116, as well as the Region Nord-Pas-de-Calais for supporting this work under the project CPER CIA research and the National Research Agency (ANR) under the program Equipex (EXCELSIOR project).Lire moins >
Lire la suite >This paper presents the full modeling and a methodology for de-embedding the interferometric scanning microwave microscopy measurements by means of dopant profile calibration. A Si calibration sample with different boron-doping level areas is used to that end. The analysis of the experimentally obtained S11 amplitudes based on the proposed model confirms the validity of the methodology. As a specific finding, changes in the tip radius between new and used tips have been clearly identified, leading to values for the effective tip radius in the range of 45 nm to 85 nm, respectively. Experimental results are also discussed in terms of the effective area concept, taking into consideration details related to the nature of tip-to-sample interaction.The authors wish to acknowledge the support from EC by means of “Marie Curie” fellowship in the framework of PEOPLE-2012-ITN project: Microwave Nanotechnology for Semiconductor and Life Science—NANOMICROWAVE, under GA: 317116, as well as the Region Nord-Pas-de-Calais for supporting this work under the project CPER CIA research and the National Research Agency (ANR) under the program Equipex (EXCELSIOR project).Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Projet ANR :
Source :
Fichiers
- https://hal.archives-ouvertes.fr/hal-03752395/document
- Accès libre
- Accéder au document
- https://hal.archives-ouvertes.fr/hal-03752395/document
- Accès libre
- Accéder au document
- document
- Accès libre
- Accéder au document
- ISMM%20dopant%20profile%20-%20revised%20final.pdf
- Accès libre
- Accéder au document