Improved hot-carrier immunity of p-MOSFET’s ...
Document type :
Article dans une revue scientifique
Title :
Improved hot-carrier immunity of p-MOSFET’s with 8nm thick nitrided gate-oxide during bidirectionnal stressing
Author(s) :
Bravaix, Alain [Auteur]
Vuillaume, D. [Auteur]
Goguenheim, D. [Auteur]
Dorval, D. [Auteur]
Haond, M. [Auteur]
Vuillaume, D. [Auteur]
Goguenheim, D. [Auteur]
Dorval, D. [Auteur]
Haond, M. [Auteur]
Journal title :
MICROELECTRONIC ENGINEERING
Publisher :
Elsevier
Publication date :
1995-06
ISSN :
0167-9317
English keyword(s) :
Hot-Carrier
Nitrided oxide
p-MOSFET
AC stressing
pass Transistor
Nitrided oxide
p-MOSFET
AC stressing
pass Transistor
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
The hot-carrier reliability in p+ poly-gate p-MOSFET's with pure and nitrided 8nm thick gate-oxide is investigated under uniform and localized electron injections. The effects of bidirectionally DC-(AC) stressing on the ...
Show more >The hot-carrier reliability in p+ poly-gate p-MOSFET's with pure and nitrided 8nm thick gate-oxide is investigated under uniform and localized electron injections. The effects of bidirectionally DC-(AC) stressing on the saturated (linear) - mode transistor parameters are monitored as they represent the worst limitating factor in pass transistors for digital logic applications. With a proper RTA condition and nitridation ambient, it is found that the gate-oxide process obtained by low-pressure plasma nitridation shows better hot-carrier immunity than pure oxide with a significant reduction of charge trapping.Show less >
Show more >The hot-carrier reliability in p+ poly-gate p-MOSFET's with pure and nitrided 8nm thick gate-oxide is investigated under uniform and localized electron injections. The effects of bidirectionally DC-(AC) stressing on the saturated (linear) - mode transistor parameters are monitored as they represent the worst limitating factor in pass transistors for digital logic applications. With a proper RTA condition and nitridation ambient, it is found that the gate-oxide process obtained by low-pressure plasma nitridation shows better hot-carrier immunity than pure oxide with a significant reduction of charge trapping.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :
Files
- https://api.istex.fr/document/2914162D836663FF5EEC546E3A103BD0647C17D9/fulltext/pdf?sid=hal
- Open access
- Access the document
- https://api.istex.fr/document/2914162D836663FF5EEC546E3A103BD0647C17D9/fulltext/pdf?sid=hal
- Open access
- Access the document
- Open access
- Access the document