Assessment of Large Critical Electric Field ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Assessment of Large Critical Electric Field in Ultra-wide Bandgap p- type Spinel ZnGa2O4
Auteur(s) :
Chi, Zeyu [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Tchelidze, Tamar [Auteur]
Sartel, Corinne [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Gamsakhurdashvili, Tsotne [Auteur]
Madaci, Ismail [Auteur]
Université de Versailles Saint-Quentin-en-Yvelines [UVSQ]
Yamano, Hayate [Auteur]
Danube University Krems
Sallet, Vincent [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Dumont, Yves [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Pérez-Tomas, Amador [Auteur]
ICN2 - Institut Catala de Nanociencia i Nanotecnologia [ICN2]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Chikoidze, Ekaterine [Auteur correspondant]
Groupe d'Etude de la Matière Condensée [GEMAC]
Groupe d'Etude de la Matière Condensée [GEMAC]
Tchelidze, Tamar [Auteur]
Sartel, Corinne [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Gamsakhurdashvili, Tsotne [Auteur]
Madaci, Ismail [Auteur]
Université de Versailles Saint-Quentin-en-Yvelines [UVSQ]
Yamano, Hayate [Auteur]
Danube University Krems
Sallet, Vincent [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Dumont, Yves [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Pérez-Tomas, Amador [Auteur]
ICN2 - Institut Catala de Nanociencia i Nanotecnologia [ICN2]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Chikoidze, Ekaterine [Auteur correspondant]
Groupe d'Etude de la Matière Condensée [GEMAC]
Titre de la revue :
Journal of Physics D: Applied Physics
Pagination :
105102
Éditeur :
IOP Publishing
Date de publication :
2023-03
ISSN :
0022-3727
Discipline(s) HAL :
Physique [physics]
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
The spinel Zinc Gallate ZnGa2O4 stands out among the emerging ultra-wide bandgap (~5eV) semiconductors as the ternary complex oxide with the widest gap where bipolar conductivity (electrons and holes) has been demonstrated. ...
Lire la suite >The spinel Zinc Gallate ZnGa2O4 stands out among the emerging ultra-wide bandgap (~5eV) semiconductors as the ternary complex oxide with the widest gap where bipolar conductivity (electrons and holes) has been demonstrated. For power and energy electronic applications, a fundamental property of the material is its critical electric field (Ec), as, for example, the Baliga’s figure of merit scales as ~Ec3 . However, the critical electric field of ZnGa2O4 is yet unknown. In this work, it is carried out with the thermodynamic analysis of point defects and free carriers versus oxygen pressure. According to this analysis, highly resistive p- -type ZnGa2O4 thin films on sapphire and Si substrates were elaborated by metal organic chemical vapor deposition (MOCVD) technique. Hall Effect measurements confirmed a low carrier level at room temperature (estimated at 10 11 cm -3 ), and breakdown voltage characterizations on a polycrystalline thin film on p- -type doped silicon substrates have been performed. We can deduce a value of the critical electric field to be at least 5.3 MV/cm for p- -type ZnGa2O4.Lire moins >
Lire la suite >The spinel Zinc Gallate ZnGa2O4 stands out among the emerging ultra-wide bandgap (~5eV) semiconductors as the ternary complex oxide with the widest gap where bipolar conductivity (electrons and holes) has been demonstrated. For power and energy electronic applications, a fundamental property of the material is its critical electric field (Ec), as, for example, the Baliga’s figure of merit scales as ~Ec3 . However, the critical electric field of ZnGa2O4 is yet unknown. In this work, it is carried out with the thermodynamic analysis of point defects and free carriers versus oxygen pressure. According to this analysis, highly resistive p- -type ZnGa2O4 thin films on sapphire and Si substrates were elaborated by metal organic chemical vapor deposition (MOCVD) technique. Hall Effect measurements confirmed a low carrier level at room temperature (estimated at 10 11 cm -3 ), and breakdown voltage characterizations on a polycrystalline thin film on p- -type doped silicon substrates have been performed. We can deduce a value of the critical electric field to be at least 5.3 MV/cm for p- -type ZnGa2O4.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Projet ANR :
Source :
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