High Breakdown Voltage GaN Schottky Diodes ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers
Auteur(s) :
Di Gioia, G. [Auteur correspondant]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Frayssinet, E. [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Samnouni, M. [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Chinni, V. [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Mondal, P. [Auteur]
LERMA Cergy [LERMA]
Treuttel, J. [Auteur]
Laboratoire d'Etude du Rayonnement et de la Matière en Astrophysique et Atmosphères = Laboratory for Studies of Radiation and Matter in Astrophysics and Atmospheres [LERMA]
Wallart, Xavier [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Zegaoui, M. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Roelens, Yannick [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Cordier, Yvon [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Zaknoune, Mohammed [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Frayssinet, E. [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Samnouni, M. [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Chinni, V. [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Mondal, P. [Auteur]
LERMA Cergy [LERMA]
Treuttel, J. [Auteur]
Laboratoire d'Etude du Rayonnement et de la Matière en Astrophysique et Atmosphères = Laboratory for Studies of Radiation and Matter in Astrophysics and Atmospheres [LERMA]
Wallart, Xavier [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Zegaoui, M. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Roelens, Yannick [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Cordier, Yvon [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Zaknoune, Mohammed [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Titre de la revue :
Journal of Electronic Materials
Pagination :
5249–5255
Éditeur :
Institute of Electrical and Electronics Engineers
Date de publication :
2023-08
ISSN :
0361-5235
Mot(s)-clé(s) en anglais :
GaN
Schottky diode
frequency multipliers
THz
wide band gap semiconductor
Schottky diode
frequency multipliers
THz
wide band gap semiconductor
Discipline(s) HAL :
Sciences de l'ingénieur [physics]/Electronique
Résumé en anglais : [en]
Quasi-vertical gallium nitride (GaN) Schottky diodes on silicon carbide (SiC) substrates were fabricated for frequency multiplier applications. The epitaxial structure employed had an n− layer of 590 nm with doping 6.6 × ...
Lire la suite >Quasi-vertical gallium nitride (GaN) Schottky diodes on silicon carbide (SiC) substrates were fabricated for frequency multiplier applications. The epitaxial structure employed had an n− layer of 590 nm with doping 6.6 × 1016 cm−3, while the n+ layer was 950 nm thick, with doping 2 × 1019 cm−3. Potassium hydroxide (KOH) chemical surface treatment before Schottky contact metallization was employed to study its effect in improving the diode parameters. The KOH-treated diode demonstrated a breakdown voltage of − 27.5 V, which is the highest reported for this type of diode. Cut-off frequencies around 500 GHz were obtained at high reverse bias (− 25 V) in spite of high series resistance. The result obtained in breakdown voltage value warrants further research in surface treatment and post-annealing of the Schottky contact optimization in order to decrease the series resistance.Lire moins >
Lire la suite >Quasi-vertical gallium nitride (GaN) Schottky diodes on silicon carbide (SiC) substrates were fabricated for frequency multiplier applications. The epitaxial structure employed had an n− layer of 590 nm with doping 6.6 × 1016 cm−3, while the n+ layer was 950 nm thick, with doping 2 × 1019 cm−3. Potassium hydroxide (KOH) chemical surface treatment before Schottky contact metallization was employed to study its effect in improving the diode parameters. The KOH-treated diode demonstrated a breakdown voltage of − 27.5 V, which is the highest reported for this type of diode. Cut-off frequencies around 500 GHz were obtained at high reverse bias (− 25 V) in spite of high series resistance. The result obtained in breakdown voltage value warrants further research in surface treatment and post-annealing of the Schottky contact optimization in order to decrease the series resistance.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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