Fabrication of silicon nitride membrane ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
Fabrication of silicon nitride membrane nanoelectromechanical resonator
Author(s) :
Xu, Hao [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Venkatachalam, Srisaran [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Boyaval, Christophe [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Tilmant, Pascal [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vaurette, Francois [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Deblock, Yves [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Théron, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nano and Microsystems - IEMN [NAM6 - IEMN]
Zhou, Xin [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Physique - IEMN [PHYSIQUE - IEMN]
Venkatachalam, Srisaran [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Boyaval, Christophe [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Tilmant, Pascal [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vaurette, Francois [Auteur]
![refId](/themes/Mirage2//images/idref.png)
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Deblock, Yves [Auteur]
![refId](/themes/Mirage2//images/idref.png)
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Théron, Didier [Auteur]
![refId](/themes/Mirage2//images/idref.png)
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nano and Microsystems - IEMN [NAM6 - IEMN]
Zhou, Xin [Auteur]
![refId](/themes/Mirage2//images/idref.png)
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
MICROELECTRONIC ENGINEERING
Pages :
112064
Publisher :
Elsevier
Publication date :
2023
ISSN :
0167-9317
English keyword(s) :
parametric amplification
Silicon nitride membrane
nanofabrication
nanoelectromechanical resonator
Silicon nitride membrane
nanofabrication
nanoelectromechanical resonator
HAL domain(s) :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
English abstract : [en]
In this work, we present details of the nanofabrication process for achieving a silicon nitride nanoelectromechanical resonator, consisting of a membrane covered with a thin aluminium layer capacitively coupled to a suspended ...
Show more >In this work, we present details of the nanofabrication process for achieving a silicon nitride nanoelectromechanical resonator, consisting of a membrane covered with a thin aluminium layer capacitively coupled to a suspended top gate. Critical nanofabrication steps have been discussed, including the XeF2 selective etching process to release the silicon nitride membrane from the substrate and the reflow process to fabricate a top gate of a suspended membrane. This ultra-clean and CMOS-compatible process allows the silicon nitride membrane to have a high quality factor (∼1.1×10 4) at room temperature and offers access to electrical integration with external circuits with high efficiency. In addition, we also demonstrate parametric amplification and de-amplification of the input signals by exploiting this suspended top gate. The measurement results of phase-sensitive amplifications have also been well fit by analytical caculations. The present work provides essential building blocks for further exploration of silicon nitride membrane based nanoelectromechanical resonators that can be efficiently integrated into large-scale electrical circuits.Show less >
Show more >In this work, we present details of the nanofabrication process for achieving a silicon nitride nanoelectromechanical resonator, consisting of a membrane covered with a thin aluminium layer capacitively coupled to a suspended top gate. Critical nanofabrication steps have been discussed, including the XeF2 selective etching process to release the silicon nitride membrane from the substrate and the reflow process to fabricate a top gate of a suspended membrane. This ultra-clean and CMOS-compatible process allows the silicon nitride membrane to have a high quality factor (∼1.1×10 4) at room temperature and offers access to electrical integration with external circuits with high efficiency. In addition, we also demonstrate parametric amplification and de-amplification of the input signals by exploiting this suspended top gate. The measurement results of phase-sensitive amplifications have also been well fit by analytical caculations. The present work provides essential building blocks for further exploration of silicon nitride membrane based nanoelectromechanical resonators that can be efficiently integrated into large-scale electrical circuits.Show less >
Language :
Anglais
Popular science :
Non
ANR Project :
Source :
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