Short-channel effect immunity and current ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Short-channel effect immunity and current capability of sub-0.1-micron MOSFET's using a recessed channel
Auteur(s) :
Bricout, P.-H. [Auteur]
DUBOIS, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
DUBOIS, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
IEEE Transactions on Electron Devices
Pagination :
1251-1255
Éditeur :
Institute of Electrical and Electronics Engineers
Date de publication :
1996-08
ISSN :
0018-9383
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
Sub-0.1 micron planar and gate recessed MOSFET's are investigated using both drift-diffusion and Monte Carlo simulations. In nonplanar devices, the influence of the gate corner explains that the threshold voltage roll-off ...
Lire la suite >Sub-0.1 micron planar and gate recessed MOSFET's are investigated using both drift-diffusion and Monte Carlo simulations. In nonplanar devices, the influence of the gate corner explains that the threshold voltage roll-off can be almost suppressed. A steeper subthreshold slope (low swing) is also obtained for a channel length shorter than 50 nm when the recessed channel MOSFET is compared to its planar counterpart. The influence of the corner effect on high-current performances is also considered in relation with the electric field profile along the Si/SiO2 interface.Lire moins >
Lire la suite >Sub-0.1 micron planar and gate recessed MOSFET's are investigated using both drift-diffusion and Monte Carlo simulations. In nonplanar devices, the influence of the gate corner explains that the threshold voltage roll-off can be almost suppressed. A steeper subthreshold slope (low swing) is also obtained for a channel length shorter than 50 nm when the recessed channel MOSFET is compared to its planar counterpart. The influence of the corner effect on high-current performances is also considered in relation with the electric field profile along the Si/SiO2 interface.Lire moins >
Langue :
Anglais
Source :