Role of AlGaN back-barrier in enhancing ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications
Auteur(s) :
Said, N. [Auteur]
Laboratoire de l'intégration, du matériau au système [IMS]
Harrouche, Kathia [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Labat, N. [Auteur]
Laboratoire de l'intégration, du matériau au système [IMS]
Tartarin, Jean-Guy [Auteur]
Université Toulouse III - Paul Sabatier [UT3]
Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications [LAAS-MOST]
Malbert, N. [Auteur]
Laboratoire de l'intégration, du matériau au système [IMS]
Laboratoire de l'intégration, du matériau au système [IMS]
Harrouche, Kathia [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Labat, N. [Auteur]
Laboratoire de l'intégration, du matériau au système [IMS]
Tartarin, Jean-Guy [Auteur]
Université Toulouse III - Paul Sabatier [UT3]
Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications [LAAS-MOST]
Malbert, N. [Auteur]
Laboratoire de l'intégration, du matériau au système [IMS]
Titre de la revue :
Microelectronics Reliability
Pagination :
115110
Éditeur :
Elsevier
Date de publication :
2023-11
ISSN :
0026-2714
Mot(s)-clé(s) en anglais :
GaN HEMT
DC step stress
Breakdown voltage
Safe operating area
Device robustness
DC step stress
Breakdown voltage
Safe operating area
Device robustness
Discipline(s) HAL :
Physique [physics]
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
In this work, the robustness of three different AlN/GaN structures targeting high frequency applications with ultra-thin 3 nm AlN barrier and devices with different gate-to-drain spacing are evaluated. Devices were step-stress ...
Lire la suite >In this work, the robustness of three different AlN/GaN structures targeting high frequency applications with ultra-thin 3 nm AlN barrier and devices with different gate-to-drain spacing are evaluated. Devices were step-stress tested in off-state, semi-on-state, and on-state conditions. Different failure mechanisms were identified. Devices without AlGaN back-barrier show a fast increase of gate leakage current, leading to a significant degradation of electrical parameters such as the threshold voltage Vth, extrinsic transconductance GM, drain saturation current IDSsat and on-resistance Ron. This study reveals the role of the AlGaN back-barrier in the improvement of the device robustness presenting a good electrical parameters stability. The presence of an AlGaN back-barrier on low carbon- doped buffer leads to better gate leakage current stability, low trapping-related and self-heating mechanisms. The AlGaN back-barrier shows an extension of the operational Safe Operating Area for AlN/GaN technology.Lire moins >
Lire la suite >In this work, the robustness of three different AlN/GaN structures targeting high frequency applications with ultra-thin 3 nm AlN barrier and devices with different gate-to-drain spacing are evaluated. Devices were step-stress tested in off-state, semi-on-state, and on-state conditions. Different failure mechanisms were identified. Devices without AlGaN back-barrier show a fast increase of gate leakage current, leading to a significant degradation of electrical parameters such as the threshold voltage Vth, extrinsic transconductance GM, drain saturation current IDSsat and on-resistance Ron. This study reveals the role of the AlGaN back-barrier in the improvement of the device robustness presenting a good electrical parameters stability. The presence of an AlGaN back-barrier on low carbon- doped buffer leads to better gate leakage current stability, low trapping-related and self-heating mechanisms. The AlGaN back-barrier shows an extension of the operational Safe Operating Area for AlN/GaN technology.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Projet ANR :
Source :