Highlighting the role of 3C–SiC in the ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors
Author(s) :
Bah, Micka [Auteur]
GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) [GREMAN - UMR 7347]
Alquier, Daniel [Auteur]
GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) [GREMAN - UMR 7347]
Lesecq, Marie [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Defrance, Nicolas [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Valente, Damien [Auteur]
GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) [GREMAN - UMR 7347]
Ngo, Thi Huong [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Frayssinet, Eric [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Portail, Marc [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
De Jaeger, Jean-Claude [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cordier, Yvon [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) [GREMAN - UMR 7347]
Alquier, Daniel [Auteur]
GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) [GREMAN - UMR 7347]
Lesecq, Marie [Auteur]
![refId](/themes/Mirage2//images/idref.png)
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Defrance, Nicolas [Auteur]
![refId](/themes/Mirage2//images/idref.png)
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Valente, Damien [Auteur]
GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) [GREMAN - UMR 7347]
Ngo, Thi Huong [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Frayssinet, Eric [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Portail, Marc [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
De Jaeger, Jean-Claude [Auteur]
![refId](/themes/Mirage2//images/idref.png)
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cordier, Yvon [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Journal title :
Materials Science in Semiconductor Processing
Pages :
107977
Publisher :
Elsevier
Publication date :
2024-03
ISSN :
1369-8001
HAL domain(s) :
Physique [physics]
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]
English abstract : [en]
AlN nucleation layer is the key issue for the performance of GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. In this work, we demonstrate and ...
Show more >AlN nucleation layer is the key issue for the performance of GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. In this work, we demonstrate and explain both the low level and the origin of propagation losses in GaN/3C–SiC/Si High Electron Mobility Transistors (HEMTs) at microwaves frequencies, in view of providing efficient circuits. First, it is shown that the use of 3C–SiC as an intermediate layer between the Si substrate and the GaN epitaxial layer drastically decreases RF propagation losses. Using Secondary Ion Mass Spectroscopy (SIMS) measurements, we demonstrate that dopant in-diffusion (both Al and Ga) into the 3C–SiC pseudo-substrate remains confined beneath the interface. Furthermore, by combining scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM), the 2D profile shows the presence of a slightly conductive zone beneath the AlN/3C–SiC interface that is highly limited (less than 50 nm) whatever the growth conditions of the (Al, Ga)N layers on 3C–SiC explaining the low propagation losses obtained for such devices. This behavior differs from the one previously observed for GaN growth on Si substrate. This work demonstrates the importance and efficiency of the 3C–SiC intermediate layer when used as a pseudo-substrate increasing not only the crystalline quality of the subsequent (Al, Ga)N layers but also permits to achieve high potential GaN power devices as it is crucial.Show less >
Show more >AlN nucleation layer is the key issue for the performance of GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. In this work, we demonstrate and explain both the low level and the origin of propagation losses in GaN/3C–SiC/Si High Electron Mobility Transistors (HEMTs) at microwaves frequencies, in view of providing efficient circuits. First, it is shown that the use of 3C–SiC as an intermediate layer between the Si substrate and the GaN epitaxial layer drastically decreases RF propagation losses. Using Secondary Ion Mass Spectroscopy (SIMS) measurements, we demonstrate that dopant in-diffusion (both Al and Ga) into the 3C–SiC pseudo-substrate remains confined beneath the interface. Furthermore, by combining scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM), the 2D profile shows the presence of a slightly conductive zone beneath the AlN/3C–SiC interface that is highly limited (less than 50 nm) whatever the growth conditions of the (Al, Ga)N layers on 3C–SiC explaining the low propagation losses obtained for such devices. This behavior differs from the one previously observed for GaN growth on Si substrate. This work demonstrates the importance and efficiency of the 3C–SiC intermediate layer when used as a pseudo-substrate increasing not only the crystalline quality of the subsequent (Al, Ga)N layers but also permits to achieve high potential GaN power devices as it is crucial.Show less >
Language :
Anglais
Popular science :
Non
ANR Project :
Source :
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