Parcourir par auteur "Chmielowska, M."
Résultats 1-4 de 4
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[Invited] Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology
Soltani, Ali; Cordier, Y.; Gerbedoen, J.C.; et al.Semiconductor Science and Technology, IOP Publishing, 2013, 28, 094003-1-6Compte-rendu et recension critique d'ouvrage -
Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances
Rennesson, S.; Lecourt, F.; Defrance, Nicolas; et al.IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60, 3105-3111Compte-rendu et recension critique d'ouvrage -
Optimization of AlGaN/GaN high electron mobility heterostructues on silicon for low cost power devices operating at 40 GHz
Rennesson, Stéphanie; Chmielowska, M.; Chenot, S.; et al.10th International Conference on Nitride Semiconductors, ICNS-10, Washington, DC, 2013Autre communication scientifique (congrès sans actes - poster - séminaire...) -
Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz
Soltani, Ali; Gerbedoen, J.C.; Cordier, Y.; et al.IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2013, 34, 490-492Compte-rendu et recension critique d'ouvrage