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Résultats 1-4 de 4
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A cost-effective technology to improve power performance of nanoribbons GaN HEMTs
Applied Physics Letters, American Institute of Physics, 24-01-2022, 120; 4, 042102Compte-rendu et recension critique d'ouvragetexte intégral -
A Highly Porous and Conductive Composite Gate Electrode for NO, NO2, O2, H2 and NH3 Exhaust Gas Sensors
18th International Meeting on Chemical Sensors, IMCS 2020, Montreal, 10-05-2020, 01-05-2020Autre communication scientifique (congrès sans actes - poster - séminaire...) -
Dual role of 3C-SiC interlayer on DC and RF isolation of GaN/Si-based devices
Applied Physics Letters, American Institute of Physics, 19-09-2022, 121; 12, 122103Compte-rendu et recension critique d'ouvrage -
Mechanisms of a rectifying TiN gate contact for AlGaN/GaN HEMTs on silicon substrate
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2020, 19, 682-688Compte-rendu et recension critique d'ouvrage