La <sub>4</sub>Ga <sub>2</sub>S <sub>8</sub>O ...
Document type :
Article dans une revue scientifique: Article original
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Title :
La <sub>4</sub>Ga <sub>2</sub>S <sub>8</sub>O <sub>3</sub>: A Rare-Earth Gallium Oxysulfide with Disulfide Ions.
Author(s) :
Yan, H. [Auteur]
Fujii, K. [Auteur]
Kabbour, Houria [Auteur]
Unité de Catalyse et Chimie du Solide (UCCS) - UMR 8181
Chikamatsu, A. [Auteur]
Meng, Y. [Auteur]
Matsushita, Y. [Auteur]
Yashima, M. [Auteur]
Yamaura, K. [Auteur]
Tsujimoto, Y. [Auteur]
Fujii, K. [Auteur]
Kabbour, Houria [Auteur]

Unité de Catalyse et Chimie du Solide (UCCS) - UMR 8181
Chikamatsu, A. [Auteur]
Meng, Y. [Auteur]
Matsushita, Y. [Auteur]
Yashima, M. [Auteur]
Yamaura, K. [Auteur]
Tsujimoto, Y. [Auteur]
Journal title :
Inorganic Chemistry
Abbreviated title :
Inorg Chem
Publication date :
2023-06-29
ISSN :
1520-510X
HAL domain(s) :
Chimie
English abstract : [en]
Band gap engineering using multiple anions is an established approach to novel photocatalysts that exhibit suitable band gap energies for water splitting and high photocorrosion resistance. However, few studies have been ...
Show more >Band gap engineering using multiple anions is an established approach to novel photocatalysts that exhibit suitable band gap energies for water splitting and high photocorrosion resistance. However, few studies have been conducted on photocatalysts with polyanions, including polychalcogenide ions. Here, we present a new quaternary gallium oxysulfide with disulfide pairs (S2)2–, La4Ga2S8O3, grown out of a KI molten salt. Single-crystal X-ray diffraction analysis revealed that the oxysulfide crystallizes in the orthorhombic space group Pbcn with lattice constants of a = 18.3330(6) Å, b = 13.0590(5) Å, and c = 5.9022(3) Å. In the crystal structure, the GaS4-based zigzag chains and OLa4-based fluorite-like strips are independently arranged in two dimensions, which alternately stack via the disulfide pairs along the third direction. The oxysulfide is a direct-type semiconductor with a band gap of 2.45 eV. First-principles calculations combined with X-ray photoemission spectroscopy measurements show that S 3p states derived from the disulfide pairs dominate the valence band maximum and conduction band minimum, and these band-edge positions are suitable for the oxidation and reduction of water. Our comprehensive study based on the electronic structure suggests that the disulfide pairs make La4Ga2S8O3 a potential photocatalyst for water splitting under visible-light irradiation.Show less >
Show more >Band gap engineering using multiple anions is an established approach to novel photocatalysts that exhibit suitable band gap energies for water splitting and high photocorrosion resistance. However, few studies have been conducted on photocatalysts with polyanions, including polychalcogenide ions. Here, we present a new quaternary gallium oxysulfide with disulfide pairs (S2)2–, La4Ga2S8O3, grown out of a KI molten salt. Single-crystal X-ray diffraction analysis revealed that the oxysulfide crystallizes in the orthorhombic space group Pbcn with lattice constants of a = 18.3330(6) Å, b = 13.0590(5) Å, and c = 5.9022(3) Å. In the crystal structure, the GaS4-based zigzag chains and OLa4-based fluorite-like strips are independently arranged in two dimensions, which alternately stack via the disulfide pairs along the third direction. The oxysulfide is a direct-type semiconductor with a band gap of 2.45 eV. First-principles calculations combined with X-ray photoemission spectroscopy measurements show that S 3p states derived from the disulfide pairs dominate the valence band maximum and conduction band minimum, and these band-edge positions are suitable for the oxidation and reduction of water. Our comprehensive study based on the electronic structure suggests that the disulfide pairs make La4Ga2S8O3 a potential photocatalyst for water splitting under visible-light irradiation.Show less >
Language :
Anglais
Audience :
Internationale
Popular science :
Non
Administrative institution(s) :
Université de Lille
CNRS
Centrale Lille
ENSCL
Univ. Artois
CNRS
Centrale Lille
ENSCL
Univ. Artois
Collections :
Submission date :
2024-01-20T00:28:26Z
2024-02-09T16:17:42Z
2024-02-09T16:17:42Z