Titre :

Reverse-Bias Current Hysteresis at Low Temperature in GaN Schottky Barrier Diodes

Auteur(s) :

Orfao, B. [Auteur correspondant]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Abou Daher, Mahmoud [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Peña, R. A. [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Vasallo, B. G. [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Pérez, S. [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Íñiguez-De-La-Torre, I. [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Paz-Martinez, G. [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Mateos, J. [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Roelens, Yannick [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zaknoune, Mohammed [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
González, T. [Auteur]
Departamento de Fisica Aplicada [Salamanca]

Titre de la revue :

Journal of Applied Physics

Pagination :

014501

Éditeur :

American Institute of Physics

Date de publication :

2024

ISSN :

0021-8979

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

In this paper, we report an analysis of reverse current mechanisms observed in GaN Schottky barrier diodes leading to hysteretic behavior of the I\textendashV curves at low temperature. By means of DC measurements from 33 ...
Lire la suite >In this paper, we report an analysis of reverse current mechanisms observed in GaN Schottky barrier diodes leading to hysteretic behavior of the I\textendashV curves at low temperature. By means of DC measurements from 33 to 475\,K, we demonstrate the presence of two leakage mechanisms when comparing the experiments with the results obtained using a unified model to predict the ideal reverse current of the diode. Poole\textendashFrenkel emission is the dominant mechanism for temperatures above 200\,K, while trap-assisted tunneling prevails for lower temperatures, where also, hysteresis cycles are revealed by means of DC dual-sweep voltage measurements. The energy of the corresponding traps has also been determined, being around 0.2 and 0.45\,eV, respectively. The hysteresis phenomenon is attributed to the bias-induced occupancy of the energy states originating the leakage-current processes, which leads to the reduction of the reverse current after a high negative voltage is applied to the diode.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Projet ANR :

Diodes Schottky GaN pour la génération de signaux THz

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL