Title :

TUNING NEGATIVE DIFFERENTIAL RESISTANCE IN A SINGLE MOLECULE TRANSISTOR: DESIGNS OF LOGIC GATES AND EFFECTS OF VARIOUS OXYGEN-AND HYDROGEN-INDUCED DEFECTS

Author(s) :

Nasri, A [Auteur]
Boubaker, A [Auteur]
Hafsi, B [Auteur]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Khaldi, W [Auteur]
Kalboussi, A [Auteur]

Journal title :

Digest Journal of Nanomaterials and Biostructures

Publisher :

Forum of Chalcogeniders

Publication date :

2017

ISSN :

1842-3582

English keyword(s) :

Gate logic Organic semiconductors Modelling Pentacene nano-electronic device Single molecule transistor Single electron transistor Negative differential resistance
Gate logic
Organic semiconductors
Modelling
Pentacene
nano-electronic device
Single molecule transistor
Single electron transistor
Negative differential resistance

HAL domain(s) :

Physique [physics]

English abstract : [en]

In this paper, a theoretical study of Single Molecule Transistor (SMT) operating as a molecular field effect transistor (MFET) has been presented. We have applied the density functional theory (DFT) in conjugation with the ...
Show more >In this paper, a theoretical study of Single Molecule Transistor (SMT) operating as a molecular field effect transistor (MFET) has been presented. We have applied the density functional theory (DFT) in conjugation with the non-equilibrium green's function (NEGF) formalism on a pentacene device in order to acquire the I-V characteristics. The bias voltage influence on the I-V curves of the MFET was studied using MATLAB simulator. A good agreement with numerical results was found. When applied different gate voltage, a negative differential resistance (NDR) behaviors are observed almost at the same sourcedrain voltage. We demonstrate the application of using a single pentacene molecular FET to realize five basic logic gates with just one MFET. For the first time, we have investigated the electrical properties of a pentacene-based Single Electron Transistor (MSET) using Atomistix ToolKit (ATK) a set of atomic-scale simulators, which can determine properties of nano-scale systems. We confirmed Coulomb blockade phenomena in this molecular device and its role to obtain the NDR. Finally, the effects of various oxygen-and hydrogen-induced defect have been also considered. The NDR effect, the dependence of the defects and the coulomb Staircase state has been outlined.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL