Comparison of Sub-Micron thick AlGaN/GaN ...
Type de document :
Communication dans un congrès avec actes
Titre :
Comparison of Sub-Micron thick AlGaN/GaN and AlN/GaN HEMTs on Silicon for RF applications
Auteur(s) :
Carneiro, Elodie [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Rennesson, Stéphanie [Auteur]
Semond, Fabrice [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Rennesson, Stéphanie [Auteur]
Semond, Fabrice [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Titre de la manifestation scientifique :
46th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2023)
Ville :
Palerme (Italie)
Pays :
Italie
Date de début de la manifestation scientifique :
2023-05-21
Titre de l’ouvrage :
Proceeding of WOCSDICE 2023
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
In this paper, a performance comparison between sub-micron thick AlGaN/GaN and AlN/GaN HEMT devices are reported. Various gate lengths have been employed in order to analyze the impact on DC and RF performances. Electrical ...
Lire la suite >In this paper, a performance comparison between sub-micron thick AlGaN/GaN and AlN/GaN HEMT devices are reported. Various gate lengths have been employed in order to analyze the impact on DC and RF performances. Electrical characteristics of these structures for 100 nm gate length show a higher maximum drain current, extrinsic transconductance Gm and RF performance with the AlN barrier as expected. An excellent electron confinement with a low leakage current below 10 µA/mm is achieved up to VDS = 30 V on both structures and can be combined with low trapping effects despite the thin total growth thickness of less than 1 µm on silicon. These results demonstrate the interest of sub-micron thick AlN/GaN-on-Si heterostructures for high frequency applications.Lire moins >
Lire la suite >In this paper, a performance comparison between sub-micron thick AlGaN/GaN and AlN/GaN HEMT devices are reported. Various gate lengths have been employed in order to analyze the impact on DC and RF performances. Electrical characteristics of these structures for 100 nm gate length show a higher maximum drain current, extrinsic transconductance Gm and RF performance with the AlN barrier as expected. An excellent electron confinement with a low leakage current below 10 µA/mm is achieved up to VDS = 30 V on both structures and can be combined with low trapping effects despite the thin total growth thickness of less than 1 µm on silicon. These results demonstrate the interest of sub-micron thick AlN/GaN-on-Si heterostructures for high frequency applications.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Projet ANR :
Source :
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