Title :

Towards High Performance Fully Vertical GaN-on-Silicon PIN Diodes

Author(s) :

Hamdaoui, Youssef [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Abid, Idriss [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Michler, Sondre [Auteur]
Ziouche, Katir [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]

Conference title :

Compound semiconductor week 2023

City :

Jeju

Country :

Corée du Sud

Start date of the conference :

2023-05-29

Book title :

Proceeding of CSW2023

Publication date :

2023-05-29

English keyword(s) :

Wide band gap semiconductor GaN-on-Si Vertical power devices
Wide band gap semiconductor
GaN-on-Si
Vertical power devices

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

In this work, we demonstrate quasi and fully vertical PIN GaN on Si diodes with a low on state resistance of 0.35 mΩ.cm² and high average electric field of 1.82 MV/cm, which is favorably comparable to the state-of-the-art ...
Show more >In this work, we demonstrate quasi and fully vertical PIN GaN on Si diodes with a low on state resistance of 0.35 mΩ.cm² and high average electric field of 1.82 MV/cm, which is favorably comparable to the state-of-the-art considering the absence of edge termination or field plates. The breakdown voltage scales well with the drift layer thickness of 3.5 µm and 4.5 µm resulting in hard breakdown values exceeding 800 V. The achieved results are promising towards kVolt-class fully vertical GaN-on-Silicon devices.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

European Project :

Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL