Titre :

Towards High Performance Fully Vertical GaN-on-Silicon PIN Diodes

Auteur(s) :

Hamdaoui, Youssef [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Abid, Idriss [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Michler, Sondre [Auteur]
Ziouche, Katir [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]

Titre de la manifestation scientifique :

Compound semiconductor week 2023

Ville :

Jeju

Pays :

Corée du Sud

Date de début de la manifestation scientifique :

2023-05-29

Titre de l’ouvrage :

Proceeding of CSW2023

Date de publication :

2023-05-29

Mot(s)-clé(s) en anglais :

Wide band gap semiconductor GaN-on-Si Vertical power devices
Wide band gap semiconductor
GaN-on-Si
Vertical power devices

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

In this work, we demonstrate quasi and fully vertical PIN GaN on Si diodes with a low on state resistance of 0.35 mΩ.cm² and high average electric field of 1.82 MV/cm, which is favorably comparable to the state-of-the-art ...
Lire la suite >In this work, we demonstrate quasi and fully vertical PIN GaN on Si diodes with a low on state resistance of 0.35 mΩ.cm² and high average electric field of 1.82 MV/cm, which is favorably comparable to the state-of-the-art considering the absence of edge termination or field plates. The breakdown voltage scales well with the drift layer thickness of 3.5 µm and 4.5 µm resulting in hard breakdown values exceeding 800 V. The achieved results are promising towards kVolt-class fully vertical GaN-on-Silicon devices.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Projet Européen :

Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL