Title :

Stacking order and electronic band structure in MBE-grown trilayer WSe$_2$ films

Author(s) :

Mahmoudi, Aymen [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Bouaziz, Meryem [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Chapuis, Niels [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Oehler, Fabrice [Auteur]
Université Paris-Saclay
Centre National de la Recherche Scientifique [CNRS]
Dudin, Pavel [Auteur]
Synchrotron SOLEIL [SSOLEIL]
Romanin, Davide [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Patriarche, Gilles [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Chaste, Julien [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Sirotti, Fausto [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Wallart, Xavier [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Avila, Jose [Auteur]
Synchrotron SOLEIL [SSOLEIL]
Ouerghi, Abdelkarim [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]

Journal title :

Physical Review B

Pages :

115437

Publisher :

American Physical Society

Publication date :

2024-03-29

ISSN :

2469-9950

HAL domain(s) :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]

English abstract : [en]

Few-layer quantum materials, such as transition-metal dichalcogenides (TMDs), are paving the path to the design of high-efficiency devices in the field of microelectronics and optoelectronics. However, heterostructures of ...
Show more >Few-layer quantum materials, such as transition-metal dichalcogenides (TMDs), are paving the path to the design of high-efficiency devices in the field of microelectronics and optoelectronics. However, heterostructures of quantum materials coming from different families, while they would immensely broaden the range of possible applications, remain challenging. Here, we demonstrate the large-scale integration of compounds from two highly multifunctional families: the three-dimensional conventional semiconductor GaP and the two-dimensional TMD semiconductor WSe$_2$ which is particularly interesting in terms of its potential for electronic, spintronic, and photonics applications. We show that a 2H-2H (or AA′A) trilayer of WSe$_2$ can be grown by molecular-beam epitaxy (MBE) onto gallium phosphide (GaP) substrate. A sharp, high-quality WSe$_2$-GaP interface was confirmed by scanning high-resolution transmission electron microscopy and x-ray photoemission spectroscopy. We present a combined experimental and theoretical study of the structure of the valence band of trilayer WSe$_2$. Nanoangle-resolved photoemission spectroscopy and density-functional theory calculation show that trilayer electrons populate two distinct subbands associated with the K and Γ valleys, with effective masses along the ΓM direction about 0.27 and 0.5me, respectively (me is the bare electron mass).Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Contrôler les propriétés électroniques des alliages ternaires de TMDC 2D en introduisant des défauts de manière contrôlée.
Hétérostructures de van der Waals à structure de bandes ajustée à base de matériaux 2D
Heterostructures à dimensions mixtes sous contrôle ferroélectrique 2D
Diodes tunnel miniaturisables à base de matériaux 2D
Topologie et faible dimensionnalité pour les applications énergétiques
mAtériaux biDimensIonnels pour les Composants élecTroniques
Low-Dimension Materials

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL