The Influence of the Temperature Gradient ...
Document type :
Article dans une revue scientifique
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Title :
The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy
Author(s) :
Marinova, Maya [Auteur]
Department of Physics [Thessaloniki]
Mantzari, Alkyoni [Auteur]
Department of Physics [Thessaloniki]
Beshkova, Milena [Auteur]
Department of Physics, Chemistry and Biology [Linköping] [IFM]
Syväjärvi, Mikael [Auteur]
Department of Physics, Chemistry and Biology [Linköping] [IFM]
Yakimova, Rositza [Auteur]
Department of Physics, Chemistry and Biology [Linköping] [IFM]
Polychroniadis, Efstathios K. [Auteur]
Department of Physics [Thessaloniki]
Department of Physics [Thessaloniki]
Mantzari, Alkyoni [Auteur]
Department of Physics [Thessaloniki]
Beshkova, Milena [Auteur]
Department of Physics, Chemistry and Biology [Linköping] [IFM]
Syväjärvi, Mikael [Auteur]
Department of Physics, Chemistry and Biology [Linköping] [IFM]
Yakimova, Rositza [Auteur]
Department of Physics, Chemistry and Biology [Linköping] [IFM]
Polychroniadis, Efstathios K. [Auteur]
Department of Physics [Thessaloniki]
Journal title :
Materials Science Forum
Volume number :
645-648
Pages :
367-370
Publication date :
2010
HAL domain(s) :
Chimie/Matériaux
English abstract : [en]
In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high resolution transmission electron microscopy. The layers were grown on Si-face 6H-SiC ...
Show more >In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high resolution transmission electron microscopy. The layers were grown on Si-face 6H-SiC nominally on-axis substrates at a temperature of 2000°C and different temperature gradients, ranging from 5 to 8 °C /mm. The influence of the temperature gradient on the structural quality of the layers is discussed. The formation of specific twin complexes and conditions for lower stacking fault density are investigated.Show less >
Show more >In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high resolution transmission electron microscopy. The layers were grown on Si-face 6H-SiC nominally on-axis substrates at a temperature of 2000°C and different temperature gradients, ranging from 5 to 8 °C /mm. The influence of the temperature gradient on the structural quality of the layers is discussed. The formation of specific twin complexes and conditions for lower stacking fault density are investigated.Show less >
Language :
Anglais
Audience :
Internationale
Popular science :
Non
Collections :
Submission date :
2019-06-17T08:43:29Z
2020-03-18T15:31:36Z
2020-03-18T15:31:36Z