Van der Waals epitaxial growth of few ...
Type de document :
Article dans une revue scientifique: Article original
DOI :
Titre :
Van der Waals epitaxial growth of few layers WSe2 on GaP(111) B
Auteur(s) :
Chapuis, Niels [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Mahmoudi, Aymen [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Coinon, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Troadec, David [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Vignaud, Dominique [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Patriarche, Gilles [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Roussel, Pascal [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Ouerghi, Abdelkarim [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Oehler, Fabrice [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Wallart, Xavier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Mahmoudi, Aymen [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Coinon, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Troadec, David [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Vignaud, Dominique [Auteur]

EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Patriarche, Gilles [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Roussel, Pascal [Auteur]

Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Ouerghi, Abdelkarim [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Oehler, Fabrice [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Wallart, Xavier [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Titre de la revue :
2D Materials
Pagination :
035031
Éditeur :
IOP Publishing
Date de publication :
2024-06-21
ISSN :
2053-1583
Mot(s)-clé(s) en anglais :
2D materials
molecular beam epitaxy
Van der Waals epitaxy
2D on 3D heterostructure
WSe2
x-ray photoelectron spectroscopy
2D materials Molecular Beam Epitaxy Van der Waals epitaxy 2D on 3D heterostructure WSe2 X-ray Photoelectron Spectroscopy
Molecular Beam Epitaxy
X-ray Photoelectron Spectroscopy
molecular beam epitaxy
Van der Waals epitaxy
2D on 3D heterostructure
WSe2
x-ray photoelectron spectroscopy
2D materials Molecular Beam Epitaxy Van der Waals epitaxy 2D on 3D heterostructure WSe2 X-ray Photoelectron Spectroscopy
Molecular Beam Epitaxy
X-ray Photoelectron Spectroscopy
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Physique [physics]
Physique [physics]
Résumé en anglais : [en]
Abstract 2D material epitaxy offers the promise of new 2D/2D and 2D/3D heterostructures with their own specific electronic and optical properties. In this work, we demonstrate the epitaxial growth of few layers WSe 2 on ...
Lire la suite >Abstract 2D material epitaxy offers the promise of new 2D/2D and 2D/3D heterostructures with their own specific electronic and optical properties. In this work, we demonstrate the epitaxial growth of few layers WSe 2 on GaP(111) B by molecular beam epitaxy. Using a combination of experimental techniques, we emphasize the role of the growth temperature and of a subsequent annealing of the grown layers under a selenium flux on the polytype formed and on its structural and morphological properties. We show that a low growth temperature promotes the formation of the 1T′ and 3R phases depending on the layer thickness whereas a higher growth temperature favours the stable 2H phase. The resulting layers exhibit clear epitaxial relationships with the GaP(111) B substrate with an optimum grain disorientation and mean size of 1.1° and around 30 nm respectively for the 2H phase. Bilayer 2H WSe 2 /GaP(111) B heterostructures exhibit a staggered type II band alignment and p-doped character of the epi-layer on both p and n-type GaP substrates. This first realisation of stable p-type WSe 2 epi-layer on a large-area GaP(111) B substrate paves the way to new 2D/3D heterostructures with great interests in nanoelectronic and optoelectronic applications, especially in the development of new 2D-material p-n junctions.Lire moins >
Lire la suite >Abstract 2D material epitaxy offers the promise of new 2D/2D and 2D/3D heterostructures with their own specific electronic and optical properties. In this work, we demonstrate the epitaxial growth of few layers WSe 2 on GaP(111) B by molecular beam epitaxy. Using a combination of experimental techniques, we emphasize the role of the growth temperature and of a subsequent annealing of the grown layers under a selenium flux on the polytype formed and on its structural and morphological properties. We show that a low growth temperature promotes the formation of the 1T′ and 3R phases depending on the layer thickness whereas a higher growth temperature favours the stable 2H phase. The resulting layers exhibit clear epitaxial relationships with the GaP(111) B substrate with an optimum grain disorientation and mean size of 1.1° and around 30 nm respectively for the 2H phase. Bilayer 2H WSe 2 /GaP(111) B heterostructures exhibit a staggered type II band alignment and p-doped character of the epi-layer on both p and n-type GaP substrates. This first realisation of stable p-type WSe 2 epi-layer on a large-area GaP(111) B substrate paves the way to new 2D/3D heterostructures with great interests in nanoelectronic and optoelectronic applications, especially in the development of new 2D-material p-n junctions.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Projet ANR :
Commentaire :
We acknowledge the financial support from the Tunne2D (ANR-21-CE24-0030) and ADICT (ANR-22-PEEL-0011) projects, as well as from the French technological network RENATECH and Region Hauts-de-France.
Source :
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