Titre :

A G-band Packaged Amplified Noise Source using SiGe BiCMOS 55 nm Technology

Auteur(s) :

Fiorese, Victor [Auteur]
STMicroelectronics
Azevedo Goncalves, Joao Carlos [Auteur]
STMicroelectronics
Bouvot, Simon [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Lepilliet, sl [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Gloria, Daniel [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Ducournau, Guillaume [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Dubois, Emmanuel [Auteur]
JUNIA [JUNIA]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]

Titre de la revue :

IEEE Transactions on Microwave Theory and Techniques

Pagination :

1775 - 1789

Éditeur :

Institute of Electrical and Electronics Engineers

Date de publication :

2024-03

ISSN :

0018-9480

Mot(s)-clé(s) en anglais :

ENRav G-band NF50 Organic substrate SiGe BiCMOS 55 nm Split-block Tunable low state
ENRav
G-band
NF50
Organic substrate
SiGe BiCMOS 55 nm
Split-block
Tunable low state

Discipline(s) HAL :

Sciences de l'ingénieur [physics]
Physique [physics]

Résumé en anglais : [en]

This article introduces the first BiCMOS SiGe technology based packaged noise source (NS) operating in G-band (140-220 GHz). An amplified PN junction diode has been packaged and biased in avalanche mode to generate Excess ...
Lire la suite >This article introduces the first BiCMOS SiGe technology based packaged noise source (NS) operating in G-band (140-220 GHz). An amplified PN junction diode has been packaged and biased in avalanche mode to generate Excess Noise Ratios (ENRav) of approximately 25 dB between 140 and 170 GHz at package output for an unbiased low state and a high state corresponding to a 20 mA cathode current. The two-stage amplifier is a cascode cell composed of two BiCMOS 55 nm NPNVHS transistors with an emitter length and width of 5.56 µm and 0.2 µm respectively. An optimal biasing results in a 8.2 mA current consumption for one cascode stage and an overall available power gain (Gav) better than 12 dB between 140 and 180 GHz. This supports operation in a low state where the diode is unbiased and the amplifier is biased which constitutes a scheme that easily validates the Minimum Detectable Signal (MDS) condition while exhibiting a 14 dB ENRav level in the beginning of G-band compared to this polarized low state. This NS shows a monitorable PCOLD and is adaptable to several noise receivers. In addition, the ENRav level flatness is better than 3 dB over the entire frequency range and the impedance matching, better than-7.5 dB at package output, is not dependent on the NS bias condition. Noise figure extraction of a WR05-connectorized III-V amplifier (MPA04-1 from VDI) was performed and compared to the ELVA ISSN-05 commercial noise source measurement, showing low discrepancy. The same study was performed on-wafer for an NPNVHS transistor on BiCMOS 55 nm technology, showing a maximum discrepancy of 0.8 dB between the two measured NFs. The NF measurement accuracy of the MPA04-1 amplifier was assessed up to 220 GHz, by varying the chosen high state while keeping the low state completely unbiased. A maximum 0.5 dB variation over 12 obtained NF values is observed up to 200 GHz.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Projet ANR :

Plateforme de traitement laser pour l'électronique flexible multifonctionnelle

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL