Title :

Thermoelectric energy conversion: How good can silicon be?

Author(s) :

Haras, Maciej [Auteur correspondant]
Lacatena, Valeria [Auteur]
Morini, François [Auteur]
Robillard, Jean-François [Auteur]
Monfray, Stephane [Auteur]
Skotnicki, Thomas [Auteur]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]

Journal title :

Materials Letters

Pages :

193-196

Publisher :

Elsevier

Publication date :

2015-10-15

ISSN :

0167-577X

English keyword(s) :

Thin films
Energy storage and conversion
Simulation and modeling
Semiconductors
Electrical properties
Thermal properties

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

Lack of materials which are thermoelectrically efficient and economically attractive is a challenge in thermoelectricity. Silicon could be a good thermoelectric material offering CMOS compatibility, harmlessness and cost ...
Show more >Lack of materials which are thermoelectrically efficient and economically attractive is a challenge in thermoelectricity. Silicon could be a good thermoelectric material offering CMOS compatibility, harmlessness and cost reduction but it features a too high thermal conductivity. High harvested power density of 7 W/cm(2) at Delta T= 30 K is modeled based on a thin-film lateral architecture of thermo-converter that takes advantage of confinement effects to reduce the thermal conductivity. The simulation leads to the conclusion that 10 nm thick Silicon has 10 x higher efficiency than bulk. (C) 2015 Elsevier B.V. All rights reserved.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL