Titre :

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release

Auteur(s) :

Passi, Vikram [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Sodervall, Ulf [Auteur]
Chalmers University of Technology [Göteborg]
Nilsson, Bengt [Auteur]
Chalmers University of Technology [Göteborg]
Petersson, Goran [Auteur]
Chalmers University of Technology [Göteborg]
Hagberg, Mats [Auteur]
Chalmers University of Technology [Göteborg]
Krzeminski, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dubois, Emmanuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Du Bois, Bert [Auteur]
IMEC [IMEC]
Raskin, Jean-Pierre [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]

Titre de la revue :

MICROELECTRONIC ENGINEERING

Pagination :

83-89

Éditeur :

Elsevier

Date de publication :

2012-07-01

ISSN :

0167-9317

Mot(s)-clé(s) en anglais :

Implantation of silicon oxide; Vapor phase hydrofluoric acid release; Wet release; Process modeling; Anisotropic etching modeling

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

Résumé en anglais : [en]

Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted ...
Lire la suite >Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors. Based on the experimentally extracted etch rate of unimplanted and implanted silicon dioxide, the patterning of the sacrificial layer can be predicted by simulation.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Projet Européen :

Silicon-based nanostructures and nanodevices for long term nanoelectronics applications

Commentaire :

6 pages

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL