Title :

[Review] The Rise of HgTe Colloidal Quantum Dots for Infrared Optoelectronics

Author(s) :

Sergeeva, Kseniia [Auteur]
City University of Hong Kong [Hong Kong] [CUHK]
Zhang, Huichen [Auteur]
Physico-chimie et dynamique des surfaces [INSP-E6]
Portniagin, Arsenii [Auteur]
City University of Hong Kong [Hong Kong] [CUHK]
Bossavit, Erwan [Auteur]
Synchrotron SOLEIL [SSOLEIL]
Mu, Ge [Auteur]
Beijing Institute of Technology [BIT]
Kershaw, Stephen [Auteur]
City University of Hong Kong [Hong Kong] [CUHK]
Ithurria, Sandrine [Auteur]
Laboratoire de Physique et d'Etude des Matériaux (UMR 8213) [LPEM]
Guyot-Sionnest, Philippe [Auteur]
University of Chicago
Keuleyan, Sean [Auteur]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Physique - IEMN [PHYSIQUE - IEMN]
Tang, Xin [Auteur]
Beijing Institute of Technology [BIT]
Rogach, Andrey [Auteur]
Lhuillier, Emmanuel [Auteur]
Institut des Nanosciences de Paris [INSP]
Physico-chimie et dynamique des surfaces [INSP-E6]

Journal title :

Advanced Functional Materials

Pages :

2405307

Publisher :

Wiley

Publication date :

2024-07-18

ISSN :

1616-301X

HAL domain(s) :

Physique [physics]

English abstract : [en]

Abstract Among materials produced as colloidal quantum dots (CQDs), HgTe has a special status being the only material covering the whole infrared range from the visible to the THz (0.7–100 µm). This unique property resulting ...
Show more >Abstract Among materials produced as colloidal quantum dots (CQDs), HgTe has a special status being the only material covering the whole infrared range from the visible to the THz (0.7–100 µm). This unique property resulting from its electronic structure, combined with an air stability and a capacity for charge conduction has generated consistent and massive efforts to produce and improve HgTe CQDs over the past two decades. Meanwhile, HgTe CQDs offer an infrared platform more advanced than any other colloidal alternatives in the mid‐wave infrared regarding their integration into advanced photonic and optoelectronic applications. Here, the latest developments of HgTe CQDs relative to the material's growth, electron structure modelling, its integration into photonic structures and its transfer as the active material from single element devices toward complex sensors and infrared imagers are reviewed. Finally, a discussion about the potential of this material for industry, rising new challenges beyond economical and production considerations at low technological readiness level, relative to the material and device design, is also included.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Détecteur plasmonique à nanoCristaux colloïdaux: une nouvelle filière pour l'OPtoélectronique INfrarouge
Diode électroluminescente infrarouge brillante par exaltation du couplage lumière-matière
Heterostructures à dimensions mixtes sous contrôle ferroélectrique 2D
Nanocristaux de HgTe une nouvelle plateforme pour l'optoélectronique THz
Microscopie de photoemission comme sonde locale du profil d'énergie des cellules solaires
Etude in operando de la modulation de propietes electroniques des hetero-bicouche twistées
Nanocristaux Colloïdaux Dopés Infrarouges
Tuning Giant Rashba Spin-Orbit Coupling in Polar Single Layer Transition Metal Dichalcogenides

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL