Title :

Investigation on Single and Split Output Gate Configurations Influence on the GaN-HEMTs Switching Behaviours

Author(s) :

Lu, Xuyang [Auteur]
Laboratoire d'Électrotechnique et d'Électronique de Puissance (L2EP) - ULR 2697
Videt, Arnaud [Auteur]
Laboratoire d'Électrotechnique et d'Électronique de Puissance (L2EP) - ULR 2697
Idir, Nadir [Auteur]
Laboratoire d'Électrotechnique et d'Électronique de Puissance (L2EP) - ULR 2697
Marsic, Vlad [Auteur]
Coventry University
Igic, Petar [Auteur]
Coventry University
Faramehr, Soroush [Auteur]
Coventry University

Conference title :

2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)

City :

Aalborg, Denmark

Country :

Danemark

Start date of the conference :

2023-09

Publisher :

IEEE

Publication date :

2023-09-04

English keyword(s) :

Gallium Nitride (GaN)
HEMTs
Intelligent gate driver
Parasitic elements
Switching losses

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

This work investigates the power GaN-HEMTs switching behaviour differences resulted from usage of two gate driving configurations: single and split outputs. The analysis based on simulation and experimental results show ...
Show more >This work investigates the power GaN-HEMTs switching behaviour differences resulted from usage of two gate driving configurations: single and split outputs. The analysis based on simulation and experimental results show that GaN-HEMTs could switch slower and cause higher switching losses when the split output configuration is used. This is because the output capacitance (C oss ) of MOSFETs inside gate driver will be charged during the turn-on process of GaN-HEMTs, and this charging process can reduce the charging speed of input capacitance (C iss ) of GaN-HEMTs. Moreover, the gate resistance and parasitic inductance are the main parameters selected for analysis, and their distribution can amplify this effect by increasing the impedance ratio of turn-on and turn-off loop. This research provides guiding suggestions for gate driver and high-efficiency GaN-HEMTs power module design.Show less >

Language :

Anglais

Audience :

Internationale

Popular science :

Non

Administrative institution(s) :

Université de Lille
Centrale Lille
Arts et Métiers Sciences et Technologies
Junia HEI

Collections :

• Laboratoire d'Électrotechnique et d'Électronique de Puissance (L2EP) - ULR 2697

Research team(s) :

Équipe Électronique de puissance

Submission date :

2024-10-03T19:45:09Z
2024-10-09T06:28:20Z